Laser-assisted Simulation of Dose Rate Effects of Wide Band Gap Semiconductor Devices
Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits, due to its exceptional advantages in terms of flexibility, safety, convenience, and precision. In recent years, wide band gap materials, known for...
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| Format: | Article |
| Language: | English |
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Editorial Board of Atomic Energy Science and Technology
2023-12-01
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| Series: | Yuanzineng kexue jishu |
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