Laser-assisted Simulation of Dose Rate Effects of Wide Band Gap Semiconductor Devices
Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits, due to its exceptional advantages in terms of flexibility, safety, convenience, and precision. In recent years, wide band gap materials, known for...
Main Author: | TANG Ge1,2;XIAO Yao1;SUN Peng3;LIU Jingrui1;ZHANG Fuwang1;LI Mo2,* |
---|---|
Format: | Article |
Language: | English |
Published: |
Editorial Board of Atomic Energy Science and Technology
2023-12-01
|
Series: | Yuanzineng kexue jishu |
Subjects: |
Similar Items
-
Simulation and characterization of wide band gap power semiconductor devices
by: Wu, Yuxin
Published: (2024) -
Wide band gap electronics materials /
by: Prelas, Mark A, et al.
Published: (1995) -
Advanced aircraft power electronics systems — The impact of simulation, standards and wide band-gap devices
by: Peter R. Wilson
Published: (2017-03-01) -
Electromagnetic band gap structures in antenna engineering /
by: 172849 Yang, Fan, et al.
Published: (2009) -
Feature-Assisted Machine Learning for Predicting Band Gaps of Binary Semiconductors
by: Sitong Huo, et al.
Published: (2024-02-01)