A method to improve the performance of all-inorganic halide perovskite CsPbBr3 memory
All-inorganic perovskite has been generally used in memristor due to its outstanding characteristics such as superior optical performance, superior stability, tunable and highly effective photoluminescence. We have proved the use of all-inorganic halide perovskite as a medium in memristor. In this p...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2022-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/ac76a1 |
| _version_ | 1797746318233305088 |
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| author | Yali Yin Zhenyang Yao Yu Xia Haitao Chen |
| author_facet | Yali Yin Zhenyang Yao Yu Xia Haitao Chen |
| author_sort | Yali Yin |
| collection | DOAJ |
| description | All-inorganic perovskite has been generally used in memristor due to its outstanding characteristics such as superior optical performance, superior stability, tunable and highly effective photoluminescence. We have proved the use of all-inorganic halide perovskite as a medium in memristor. In this paper, the memristor with construction of Au/CsPbBr _3 /FTO, Au/CsPbBr _3 /ZnO/FTO and Au/ZnO/CsPbBr _3 /FTO were manufactured by one-step spin-coating approach to observe representative bipolar resistance switching behaviors in different construction of resistance random access memory devices. Results show that the memristor based on ZnO/CsPbBr _3 heterojunction having excellent resistance switching effect with low resetting, setting voltages and and high environmental stability. Moreover, a model of filaments through the CsPbBr _3 layer was raised to interpret the resistive switching effect. |
| first_indexed | 2024-03-12T15:35:08Z |
| format | Article |
| id | doaj.art-2e0644fa0e0f40e0b80092d9395cfffa |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:35:08Z |
| publishDate | 2022-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-2e0644fa0e0f40e0b80092d9395cfffa2023-08-09T16:15:05ZengIOP PublishingMaterials Research Express2053-15912022-01-019606500710.1088/2053-1591/ac76a1A method to improve the performance of all-inorganic halide perovskite CsPbBr3 memoryYali Yin0Zhenyang Yao1Yu Xia2Haitao Chen3https://orcid.org/0000-0001-9944-8486College of Physics Science and Technology, Yangzhou University , Yangzhou 225002, People’s Republic of ChinaCollege of Physics Science and Technology, Yangzhou University , Yangzhou 225002, People’s Republic of ChinaCollege of Physics Science and Technology, Yangzhou University , Yangzhou 225002, People’s Republic of ChinaCollege of Physics Science and Technology, Yangzhou University , Yangzhou 225002, People’s Republic of ChinaAll-inorganic perovskite has been generally used in memristor due to its outstanding characteristics such as superior optical performance, superior stability, tunable and highly effective photoluminescence. We have proved the use of all-inorganic halide perovskite as a medium in memristor. In this paper, the memristor with construction of Au/CsPbBr _3 /FTO, Au/CsPbBr _3 /ZnO/FTO and Au/ZnO/CsPbBr _3 /FTO were manufactured by one-step spin-coating approach to observe representative bipolar resistance switching behaviors in different construction of resistance random access memory devices. Results show that the memristor based on ZnO/CsPbBr _3 heterojunction having excellent resistance switching effect with low resetting, setting voltages and and high environmental stability. Moreover, a model of filaments through the CsPbBr _3 layer was raised to interpret the resistive switching effect.https://doi.org/10.1088/2053-1591/ac76a1perovskiteCsPbBr3resistance switchingmemory devices |
| spellingShingle | Yali Yin Zhenyang Yao Yu Xia Haitao Chen A method to improve the performance of all-inorganic halide perovskite CsPbBr3 memory Materials Research Express perovskite CsPbBr3 resistance switching memory devices |
| title | A method to improve the performance of all-inorganic halide perovskite CsPbBr3 memory |
| title_full | A method to improve the performance of all-inorganic halide perovskite CsPbBr3 memory |
| title_fullStr | A method to improve the performance of all-inorganic halide perovskite CsPbBr3 memory |
| title_full_unstemmed | A method to improve the performance of all-inorganic halide perovskite CsPbBr3 memory |
| title_short | A method to improve the performance of all-inorganic halide perovskite CsPbBr3 memory |
| title_sort | method to improve the performance of all inorganic halide perovskite cspbbr3 memory |
| topic | perovskite CsPbBr3 resistance switching memory devices |
| url | https://doi.org/10.1088/2053-1591/ac76a1 |
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