Numerical analysis of non-uniform Cu(In, Ga)Se2 growth in a selenization process on large-area substrates for mass production
Growth of a Cu(In, Ga)Se $ _2 $ (CIGS) layer during a selenization process is numerically studied to understand mechanisms for formation of stains on large-area substrates batched. CIGS layers need to be uniformly deposited onto the substrates to obtain even conversion efficiency. However, it is dif...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2022-12-01
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| Series: | Engineering Applications of Computational Fluid Mechanics |
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| Online Access: | http://dx.doi.org/10.1080/19942060.2022.2036242 |
| _version_ | 1818334038755115008 |
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| author | Taejong Yu Daegeun Yoon Donghyun You |
| author_facet | Taejong Yu Daegeun Yoon Donghyun You |
| author_sort | Taejong Yu |
| collection | DOAJ |
| description | Growth of a Cu(In, Ga)Se $ _2 $ (CIGS) layer during a selenization process is numerically studied to understand mechanisms for formation of stains on large-area substrates batched. CIGS layers need to be uniformly deposited onto the substrates to obtain even conversion efficiency. However, it is difficult to control growth of large-area CIGS layers due to turbulent thermal-fluid flow leaving stains on the substrates. In the present research, the selenization process for an industrial-scale substrates of which sizes are order of square-meters is considered with integrated simulations of detailed key physical processes such turbulent convection, convective-radiative-conductive heat transfer, and chemical reactions. Ascending or descending gas generated by heaters is identified by the time-averaged velocity fields. Descending flow in the passages between substrates produces uneven flow rates across the substrates leading to inhomogeneous supply of heat energy and gas species to the surface chemical reactions. The uneven temperature distribution is the major cause for the stain formation on the substrates. Gross shapes of the stains are found to be well matched with the predicted velocity contour of gas flow above the substrate. The stains are expected to be alleviated by rectifying gas flow such that flow rates become uniform across substrates before entering the passages. |
| first_indexed | 2024-12-13T14:01:11Z |
| format | Article |
| id | doaj.art-2e2159eb354940bf9f8748756ab0ebe4 |
| institution | Directory Open Access Journal |
| issn | 1994-2060 1997-003X |
| language | English |
| last_indexed | 2024-12-13T14:01:11Z |
| publishDate | 2022-12-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Engineering Applications of Computational Fluid Mechanics |
| spelling | doaj.art-2e2159eb354940bf9f8748756ab0ebe42022-12-21T23:42:43ZengTaylor & Francis GroupEngineering Applications of Computational Fluid Mechanics1994-20601997-003X2022-12-0116164666510.1080/19942060.2022.20362422036242Numerical analysis of non-uniform Cu(In, Ga)Se2 growth in a selenization process on large-area substrates for mass productionTaejong Yu0Daegeun Yoon1Donghyun You2Pohang University of Science and TechnologyPohang University of Science and TechnologyPohang University of Science and TechnologyGrowth of a Cu(In, Ga)Se $ _2 $ (CIGS) layer during a selenization process is numerically studied to understand mechanisms for formation of stains on large-area substrates batched. CIGS layers need to be uniformly deposited onto the substrates to obtain even conversion efficiency. However, it is difficult to control growth of large-area CIGS layers due to turbulent thermal-fluid flow leaving stains on the substrates. In the present research, the selenization process for an industrial-scale substrates of which sizes are order of square-meters is considered with integrated simulations of detailed key physical processes such turbulent convection, convective-radiative-conductive heat transfer, and chemical reactions. Ascending or descending gas generated by heaters is identified by the time-averaged velocity fields. Descending flow in the passages between substrates produces uneven flow rates across the substrates leading to inhomogeneous supply of heat energy and gas species to the surface chemical reactions. The uneven temperature distribution is the major cause for the stain formation on the substrates. Gross shapes of the stains are found to be well matched with the predicted velocity contour of gas flow above the substrate. The stains are expected to be alleviated by rectifying gas flow such that flow rates become uniform across substrates before entering the passages.http://dx.doi.org/10.1080/19942060.2022.2036242cigs solar cellselenization processstain formationlarge-eddy simulationchemical reaction modelefficiency prediction model |
| spellingShingle | Taejong Yu Daegeun Yoon Donghyun You Numerical analysis of non-uniform Cu(In, Ga)Se2 growth in a selenization process on large-area substrates for mass production Engineering Applications of Computational Fluid Mechanics cigs solar cell selenization process stain formation large-eddy simulation chemical reaction model efficiency prediction model |
| title | Numerical analysis of non-uniform Cu(In, Ga)Se2 growth in a selenization process on large-area substrates for mass production |
| title_full | Numerical analysis of non-uniform Cu(In, Ga)Se2 growth in a selenization process on large-area substrates for mass production |
| title_fullStr | Numerical analysis of non-uniform Cu(In, Ga)Se2 growth in a selenization process on large-area substrates for mass production |
| title_full_unstemmed | Numerical analysis of non-uniform Cu(In, Ga)Se2 growth in a selenization process on large-area substrates for mass production |
| title_short | Numerical analysis of non-uniform Cu(In, Ga)Se2 growth in a selenization process on large-area substrates for mass production |
| title_sort | numerical analysis of non uniform cu in ga se2 growth in a selenization process on large area substrates for mass production |
| topic | cigs solar cell selenization process stain formation large-eddy simulation chemical reaction model efficiency prediction model |
| url | http://dx.doi.org/10.1080/19942060.2022.2036242 |
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