AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping
The characteristics of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with polarization-doped p-type layers were numerically analyzed. The energy band diagrams, carrier distributions in the multiple quantum wells (MQWs) and the p-type regions, electroluminescence spectra, current-ve...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
| Online Access: | https://ieeexplore.ieee.org/document/7386792/ |
| _version_ | 1818619158575710208 |
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| author | Jianjun Chang Dunjun Chen Junjun Xue Kexiu Dong Bin Liu Hai Lu Rong Zhang Youdou Zheng |
| author_facet | Jianjun Chang Dunjun Chen Junjun Xue Kexiu Dong Bin Liu Hai Lu Rong Zhang Youdou Zheng |
| author_sort | Jianjun Chang |
| collection | DOAJ |
| description | The characteristics of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with polarization-doped p-type layers were numerically analyzed. The energy band diagrams, carrier distributions in the multiple quantum wells (MQWs) and the p-type regions, electroluminescence spectra, current-versus-voltage (I-V) curves, and radiative recombination rates in MQWs, were investigated. The results indicate that DUV LEDs with polarization-doped p-type layers have lower electron leakage, better hole injection efficiency, and higher lighting emission intensity over conventional DUV LEDs. The results also reveal a significant improvement on these characteristics by increasing the Al content of the last quantum barrier in polarization-doped DUV LEDs. |
| first_indexed | 2024-12-16T17:33:02Z |
| format | Article |
| id | doaj.art-2e38b6af102d4d4493ce0d5eaeaa0db2 |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-16T17:33:02Z |
| publishDate | 2016-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-2e38b6af102d4d4493ce0d5eaeaa0db22022-12-21T22:22:52ZengIEEEIEEE Photonics Journal1943-06552016-01-01811710.1109/JPHOT.2016.25162577386792AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization DopingJianjun Chang0Dunjun Chen1Junjun Xue2Kexiu Dong3Bin Liu4Hai Lu5Rong Zhang6Youdou Zheng7Key Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, ChinaKey Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, ChinaKey Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, ChinaSch. of Mech. & Electron. Eng., Chuzhou Univ., Chuzhou, ChinaKey Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, ChinaKey Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, ChinaKey Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, ChinaKey Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, ChinaThe characteristics of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with polarization-doped p-type layers were numerically analyzed. The energy band diagrams, carrier distributions in the multiple quantum wells (MQWs) and the p-type regions, electroluminescence spectra, current-versus-voltage (I-V) curves, and radiative recombination rates in MQWs, were investigated. The results indicate that DUV LEDs with polarization-doped p-type layers have lower electron leakage, better hole injection efficiency, and higher lighting emission intensity over conventional DUV LEDs. The results also reveal a significant improvement on these characteristics by increasing the Al content of the last quantum barrier in polarization-doped DUV LEDs.https://ieeexplore.ieee.org/document/7386792/ |
| spellingShingle | Jianjun Chang Dunjun Chen Junjun Xue Kexiu Dong Bin Liu Hai Lu Rong Zhang Youdou Zheng AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping IEEE Photonics Journal |
| title | AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping |
| title_full | AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping |
| title_fullStr | AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping |
| title_full_unstemmed | AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping |
| title_short | AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping |
| title_sort | algan based multiple quantum well deep ultraviolet light emitting diodes with polarization doping |
| url | https://ieeexplore.ieee.org/document/7386792/ |
| work_keys_str_mv | AT jianjunchang alganbasedmultiplequantumwelldeepultravioletlightemittingdiodeswithpolarizationdoping AT dunjunchen alganbasedmultiplequantumwelldeepultravioletlightemittingdiodeswithpolarizationdoping AT junjunxue alganbasedmultiplequantumwelldeepultravioletlightemittingdiodeswithpolarizationdoping AT kexiudong alganbasedmultiplequantumwelldeepultravioletlightemittingdiodeswithpolarizationdoping AT binliu alganbasedmultiplequantumwelldeepultravioletlightemittingdiodeswithpolarizationdoping AT hailu alganbasedmultiplequantumwelldeepultravioletlightemittingdiodeswithpolarizationdoping AT rongzhang alganbasedmultiplequantumwelldeepultravioletlightemittingdiodeswithpolarizationdoping AT youdouzheng alganbasedmultiplequantumwelldeepultravioletlightemittingdiodeswithpolarizationdoping |