Bulk versus Contact Doping in Organic Semiconductors
This study presents a comparative theoretical analysis of different doping schemes in organic semiconductor devices. Especially, an in-depth investigation into bulk and contact doping methods is conducted, focusing on their direct impact on the terminal characteristics of field-effect transistors. W...
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Format: | Article |
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MDPI AG
2021-06-01
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Online Access: | https://www.mdpi.com/2072-666X/12/7/742 |
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author | Chang-Hyun Kim |
author_facet | Chang-Hyun Kim |
author_sort | Chang-Hyun Kim |
collection | DOAJ |
description | This study presents a comparative theoretical analysis of different doping schemes in organic semiconductor devices. Especially, an in-depth investigation into bulk and contact doping methods is conducted, focusing on their direct impact on the terminal characteristics of field-effect transistors. We use experimental data from a high-performance undoped organic transistor to prepare a base simulation framework and carry out a series of predictive simulations with various position- and density-dependent doping conditions. Bulk doping is shown to offer an overall effective current modulation, while contact doping proves to be rather useful to overcome high-barrier contacts. We additionally demonstrate the concept of selective channel doping as an alternative and establish a critical understanding of device performances associated with the key electrostatic features dictated by interfaces and applied voltages. |
first_indexed | 2024-03-10T10:05:20Z |
format | Article |
id | doaj.art-2e47e2fe8ffa4255874c61e29585c8d3 |
institution | Directory Open Access Journal |
issn | 2072-666X |
language | English |
last_indexed | 2024-03-10T10:05:20Z |
publishDate | 2021-06-01 |
publisher | MDPI AG |
record_format | Article |
series | Micromachines |
spelling | doaj.art-2e47e2fe8ffa4255874c61e29585c8d32023-11-22T01:33:18ZengMDPI AGMicromachines2072-666X2021-06-0112774210.3390/mi12070742Bulk versus Contact Doping in Organic SemiconductorsChang-Hyun Kim0Department of Electronic Engineering, Gachon University, Seongnam 13120, KoreaThis study presents a comparative theoretical analysis of different doping schemes in organic semiconductor devices. Especially, an in-depth investigation into bulk and contact doping methods is conducted, focusing on their direct impact on the terminal characteristics of field-effect transistors. We use experimental data from a high-performance undoped organic transistor to prepare a base simulation framework and carry out a series of predictive simulations with various position- and density-dependent doping conditions. Bulk doping is shown to offer an overall effective current modulation, while contact doping proves to be rather useful to overcome high-barrier contacts. We additionally demonstrate the concept of selective channel doping as an alternative and establish a critical understanding of device performances associated with the key electrostatic features dictated by interfaces and applied voltages.https://www.mdpi.com/2072-666X/12/7/742organic semiconductorsfield-effect transistorsdopingcontact effects |
spellingShingle | Chang-Hyun Kim Bulk versus Contact Doping in Organic Semiconductors Micromachines organic semiconductors field-effect transistors doping contact effects |
title | Bulk versus Contact Doping in Organic Semiconductors |
title_full | Bulk versus Contact Doping in Organic Semiconductors |
title_fullStr | Bulk versus Contact Doping in Organic Semiconductors |
title_full_unstemmed | Bulk versus Contact Doping in Organic Semiconductors |
title_short | Bulk versus Contact Doping in Organic Semiconductors |
title_sort | bulk versus contact doping in organic semiconductors |
topic | organic semiconductors field-effect transistors doping contact effects |
url | https://www.mdpi.com/2072-666X/12/7/742 |
work_keys_str_mv | AT changhyunkim bulkversuscontactdopinginorganicsemiconductors |