Bulk versus Contact Doping in Organic Semiconductors

This study presents a comparative theoretical analysis of different doping schemes in organic semiconductor devices. Especially, an in-depth investigation into bulk and contact doping methods is conducted, focusing on their direct impact on the terminal characteristics of field-effect transistors. W...

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Main Author: Chang-Hyun Kim
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/12/7/742
_version_ 1797528861672472576
author Chang-Hyun Kim
author_facet Chang-Hyun Kim
author_sort Chang-Hyun Kim
collection DOAJ
description This study presents a comparative theoretical analysis of different doping schemes in organic semiconductor devices. Especially, an in-depth investigation into bulk and contact doping methods is conducted, focusing on their direct impact on the terminal characteristics of field-effect transistors. We use experimental data from a high-performance undoped organic transistor to prepare a base simulation framework and carry out a series of predictive simulations with various position- and density-dependent doping conditions. Bulk doping is shown to offer an overall effective current modulation, while contact doping proves to be rather useful to overcome high-barrier contacts. We additionally demonstrate the concept of selective channel doping as an alternative and establish a critical understanding of device performances associated with the key electrostatic features dictated by interfaces and applied voltages.
first_indexed 2024-03-10T10:05:20Z
format Article
id doaj.art-2e47e2fe8ffa4255874c61e29585c8d3
institution Directory Open Access Journal
issn 2072-666X
language English
last_indexed 2024-03-10T10:05:20Z
publishDate 2021-06-01
publisher MDPI AG
record_format Article
series Micromachines
spelling doaj.art-2e47e2fe8ffa4255874c61e29585c8d32023-11-22T01:33:18ZengMDPI AGMicromachines2072-666X2021-06-0112774210.3390/mi12070742Bulk versus Contact Doping in Organic SemiconductorsChang-Hyun Kim0Department of Electronic Engineering, Gachon University, Seongnam 13120, KoreaThis study presents a comparative theoretical analysis of different doping schemes in organic semiconductor devices. Especially, an in-depth investigation into bulk and contact doping methods is conducted, focusing on their direct impact on the terminal characteristics of field-effect transistors. We use experimental data from a high-performance undoped organic transistor to prepare a base simulation framework and carry out a series of predictive simulations with various position- and density-dependent doping conditions. Bulk doping is shown to offer an overall effective current modulation, while contact doping proves to be rather useful to overcome high-barrier contacts. We additionally demonstrate the concept of selective channel doping as an alternative and establish a critical understanding of device performances associated with the key electrostatic features dictated by interfaces and applied voltages.https://www.mdpi.com/2072-666X/12/7/742organic semiconductorsfield-effect transistorsdopingcontact effects
spellingShingle Chang-Hyun Kim
Bulk versus Contact Doping in Organic Semiconductors
Micromachines
organic semiconductors
field-effect transistors
doping
contact effects
title Bulk versus Contact Doping in Organic Semiconductors
title_full Bulk versus Contact Doping in Organic Semiconductors
title_fullStr Bulk versus Contact Doping in Organic Semiconductors
title_full_unstemmed Bulk versus Contact Doping in Organic Semiconductors
title_short Bulk versus Contact Doping in Organic Semiconductors
title_sort bulk versus contact doping in organic semiconductors
topic organic semiconductors
field-effect transistors
doping
contact effects
url https://www.mdpi.com/2072-666X/12/7/742
work_keys_str_mv AT changhyunkim bulkversuscontactdopinginorganicsemiconductors