Preparation and Characterization of Porous Silicon for Photodetector Applications
Photoelectrochemical etching (PECE) was used to prepare porous silicon (PS) layers of polished surfaces of (100) n-type silicon wafers with a resistance of 0.1-100 μm and thickness of 600 ± 25 μm. The directed slices are to be catalyzed at different etching times (5, 15, 25 min) with a constant Hydr...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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University of Technology, Baghdad
2022-06-01
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| Series: | Journal of Applied Sciences and Nanotechnology |
| Subjects: | |
| Online Access: | https://jasn.uotechnology.edu.iq/article_17824_0ef291d34af465ef4bba1ec5ac43a016.pdf |
| _version_ | 1818554860790874112 |
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| author | Shahad Khudiar Uday Nayef Falah Mutlak |
| author_facet | Shahad Khudiar Uday Nayef Falah Mutlak |
| author_sort | Shahad Khudiar |
| collection | DOAJ |
| description | Photoelectrochemical etching (PECE) was used to prepare porous silicon (PS) layers of polished surfaces of (100) n-type silicon wafers with a resistance of 0.1-100 μm and thickness of 600 ± 25 μm. The directed slices are to be catalyzed at different etching times (5, 15, 25 min) with a constant Hydrofluoric acid of 20% and with a fixed current density of 20 mA/cm². The porous silicon morphology was investigated using scanning electron microscopy (SEM). Samples were formed by different engraving times. It revealed that the silicon surface has a layer of sponge-like structure, with the average pore diameter (740±1 nm, 550±2 nm,460±3 nm) of the porous silicon increasing as the etching time increased. PS Al PS /Si /Al photodetectors were found to work as a photodetector over a wide wavelength responsivity. |
| first_indexed | 2024-12-12T09:45:38Z |
| format | Article |
| id | doaj.art-2e5997dbf9084f298c77f5eef8029743 |
| institution | Directory Open Access Journal |
| issn | 2788-6867 |
| language | English |
| last_indexed | 2024-12-12T09:45:38Z |
| publishDate | 2022-06-01 |
| publisher | University of Technology, Baghdad |
| record_format | Article |
| series | Journal of Applied Sciences and Nanotechnology |
| spelling | doaj.art-2e5997dbf9084f298c77f5eef80297432022-12-22T00:28:24ZengUniversity of Technology, BaghdadJournal of Applied Sciences and Nanotechnology2788-68672022-06-0122646910.53293/jasn.2021.3646.103217824Preparation and Characterization of Porous Silicon for Photodetector ApplicationsShahad Khudiar0Uday Nayef1Falah Mutlak2Department of Applied Sciences, University of Technology – IraqDepartment of Applied Sciences, University of Technology – IraqCollege of Science, University of Baghdad – IraqPhotoelectrochemical etching (PECE) was used to prepare porous silicon (PS) layers of polished surfaces of (100) n-type silicon wafers with a resistance of 0.1-100 μm and thickness of 600 ± 25 μm. The directed slices are to be catalyzed at different etching times (5, 15, 25 min) with a constant Hydrofluoric acid of 20% and with a fixed current density of 20 mA/cm². The porous silicon morphology was investigated using scanning electron microscopy (SEM). Samples were formed by different engraving times. It revealed that the silicon surface has a layer of sponge-like structure, with the average pore diameter (740±1 nm, 550±2 nm,460±3 nm) of the porous silicon increasing as the etching time increased. PS Al PS /Si /Al photodetectors were found to work as a photodetector over a wide wavelength responsivity.https://jasn.uotechnology.edu.iq/article_17824_0ef291d34af465ef4bba1ec5ac43a016.pdfpece etchingporous siliconetching timephotodetectorsj-v characteristics |
| spellingShingle | Shahad Khudiar Uday Nayef Falah Mutlak Preparation and Characterization of Porous Silicon for Photodetector Applications Journal of Applied Sciences and Nanotechnology pece etching porous silicon etching time photodetectors j-v characteristics |
| title | Preparation and Characterization of Porous Silicon for Photodetector Applications |
| title_full | Preparation and Characterization of Porous Silicon for Photodetector Applications |
| title_fullStr | Preparation and Characterization of Porous Silicon for Photodetector Applications |
| title_full_unstemmed | Preparation and Characterization of Porous Silicon for Photodetector Applications |
| title_short | Preparation and Characterization of Porous Silicon for Photodetector Applications |
| title_sort | preparation and characterization of porous silicon for photodetector applications |
| topic | pece etching porous silicon etching time photodetectors j-v characteristics |
| url | https://jasn.uotechnology.edu.iq/article_17824_0ef291d34af465ef4bba1ec5ac43a016.pdf |
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