Preparation and Characterization of Porous Silicon for Photodetector Applications
Photoelectrochemical etching (PECE) was used to prepare porous silicon (PS) layers of polished surfaces of (100) n-type silicon wafers with a resistance of 0.1-100 μm and thickness of 600 ± 25 μm. The directed slices are to be catalyzed at different etching times (5, 15, 25 min) with a constant Hydr...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
University of Technology, Baghdad
2022-06-01
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| Series: | Journal of Applied Sciences and Nanotechnology |
| Subjects: | |
| Online Access: | https://jasn.uotechnology.edu.iq/article_17824_0ef291d34af465ef4bba1ec5ac43a016.pdf |