Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks
Neuromorphic computation based on resistive switching devices represents a relevant hardware alternative for artificial deep neural networks. For the highest accuracies on pattern recognition tasks, an analog, linear, and symmetric synaptic weight is essential. Moreover, the resistive switching devi...
Main Authors: | Maria Elias Pereira, Jonas Deuermeier, Pedro Freitas, Pedro Barquinha, Weidong Zhang, Rodrigo Martins, Elvira Fortunato, Asal Kiazadeh |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2022-01-01
|
Series: | APL Materials |
Online Access: | http://dx.doi.org/10.1063/5.0073056 |
Similar Items
-
Inkjet printed IGZO memristors with volatile and non-volatile switching
by: Miguel Franco, et al.
Published: (2024-03-01) -
Recent progress in optoelectronic memristors for neuromorphic and in-memory computation
by: Maria Elias Pereira, et al.
Published: (2023-01-01) -
Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices
by: Carlos Silva, et al.
Published: (2023-11-01) -
Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors
by: Marco Moreira, et al.
Published: (2019-09-01) -
Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxide
by: Carlos Silva, et al.
Published: (2021-04-01)