Simulation of temperature conditions in the elements of microelectronic devices

The heat equation with discontinuous and singular coefficients for isotropic band with foreign rectangular inclusion has been built with the use of generalized functions based method. Using the of integral transformftions the analytical solution of this equation has been obtained in case when on one...

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Main Authors: Gavrysh V. I., Kosach A. I.
Format: Article
Language:English
Published: Politehperiodika 2011-04-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
Online Access:http://www.tkea.com.ua/tkea/2011/1-2_2011/pdf/09.zip
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author Gavrysh V. I.
Kosach A. I.
author_facet Gavrysh V. I.
Kosach A. I.
author_sort Gavrysh V. I.
collection DOAJ
description The heat equation with discontinuous and singular coefficients for isotropic band with foreign rectangular inclusion has been built with the use of generalized functions based method. Using the of integral transformftions the analytical solution of this equation has been obtained in case when on one of the band bounds the convective heat transfer with the environment takes place, but the other is under the heat flow. The piecewise-linear approximation of the required temperature at the boundaries of foreign inclusions using generalized functions has been conducted.
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spelling doaj.art-2e7a7cd40a5944599529d74434737c412022-12-21T18:30:43ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182011-04-011-22730Simulation of temperature conditions in the elements of microelectronic devicesGavrysh V. I.Kosach A. I.The heat equation with discontinuous and singular coefficients for isotropic band with foreign rectangular inclusion has been built with the use of generalized functions based method. Using the of integral transformftions the analytical solution of this equation has been obtained in case when on one of the band bounds the convective heat transfer with the environment takes place, but the other is under the heat flow. The piecewise-linear approximation of the required temperature at the boundaries of foreign inclusions using generalized functions has been conducted.http://www.tkea.com.ua/tkea/2011/1-2_2011/pdf/09.zipisotropic bandforeign inclusionsheat flowperfect thermal contactheat transferconvective heat transferthermal conductivityexcess temperature
spellingShingle Gavrysh V. I.
Kosach A. I.
Simulation of temperature conditions in the elements of microelectronic devices
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
isotropic band
foreign inclusions
heat flow
perfect thermal contact
heat transfer
convective heat transfer
thermal conductivity
excess temperature
title Simulation of temperature conditions in the elements of microelectronic devices
title_full Simulation of temperature conditions in the elements of microelectronic devices
title_fullStr Simulation of temperature conditions in the elements of microelectronic devices
title_full_unstemmed Simulation of temperature conditions in the elements of microelectronic devices
title_short Simulation of temperature conditions in the elements of microelectronic devices
title_sort simulation of temperature conditions in the elements of microelectronic devices
topic isotropic band
foreign inclusions
heat flow
perfect thermal contact
heat transfer
convective heat transfer
thermal conductivity
excess temperature
url http://www.tkea.com.ua/tkea/2011/1-2_2011/pdf/09.zip
work_keys_str_mv AT gavryshvi simulationoftemperatureconditionsintheelementsofmicroelectronicdevices
AT kosachai simulationoftemperatureconditionsintheelementsofmicroelectronicdevices