Characterization of Mn<sub>5</sub>Ge<sub>3</sub> Contacts on a Shallow Ge/SiGe Heterostructure
<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">M</mi><msub><mi mathvariant="normal">n</mi><mn>5</mn></msub><...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-03-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/14/6/539 |
| _version_ | 1797239781844844544 |
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| author | Troy A. Hutchins-Delgado Sadhvikas J. Addamane Ping Lu Tzu-Ming Lu |
| author_facet | Troy A. Hutchins-Delgado Sadhvikas J. Addamane Ping Lu Tzu-Ming Lu |
| author_sort | Troy A. Hutchins-Delgado |
| collection | DOAJ |
| description | <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">M</mi><msub><mi mathvariant="normal">n</mi><mn>5</mn></msub><mi mathvariant="normal">G</mi><msub><mi mathvariant="normal">e</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula> is a ferromagnetic phase of the Mn-Ge system that is a potential contact material for efficient spin injection and detection. Here, we investigate the creation of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">M</mi><msub><mi mathvariant="normal">n</mi><mn>5</mn></msub><mi mathvariant="normal">G</mi><msub><mi mathvariant="normal">e</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>-based contacts on a Ge/SiGe quantum well heterostructure via solid-state synthesis. X-ray diffraction spectra fitting indicates the formation of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">M</mi><msub><mi mathvariant="normal">n</mi><mn>5</mn></msub><mi mathvariant="normal">G</mi><msub><mi mathvariant="normal">e</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>-based contacts on bulk Ge and Ge/SiGe. High-resolution scanning transmission electron microscopy imaging and energy dispersive X-ray spectroscopy verify the correct <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">M</mi><msub><mi mathvariant="normal">n</mi><mn>5</mn></msub><mi mathvariant="normal">G</mi><msub><mi mathvariant="normal">e</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>-based phase formation. Schottky diode measurements, transmission line measurements, and Hall measurements reveal that <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">M</mi><msub><mi mathvariant="normal">n</mi><mn>5</mn></msub><mi mathvariant="normal">G</mi><msub><mi mathvariant="normal">e</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>-based contacts serve as good p-type contacts for Ge/SiGe quantum well heterostructures due to having a low Schottky barrier height of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>0.10</mn></mrow></semantics></math></inline-formula><inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">e</mi><mspace width="-0.21251pt"></mspace><mi mathvariant="normal">V</mi></mrow></semantics></math></inline-formula> (extracted from a <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">M</mi><msub><mi mathvariant="normal">n</mi><mn>5</mn></msub><mi mathvariant="normal">G</mi><msub><mi mathvariant="normal">e</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>/n-Ge analogue) and a contact resistance in the order of 1 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="normal">k</mi></semantics></math></inline-formula><inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">Ω</mi></semantics></math></inline-formula>. Furthermore, we show that these electrical characteristics have a gate-voltage dependence, thereby providing tunability. |
| first_indexed | 2024-04-24T17:57:00Z |
| format | Article |
| id | doaj.art-2ea7af2ad10e4b6393f550e7894dd3b9 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-04-24T17:57:00Z |
| publishDate | 2024-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-2ea7af2ad10e4b6393f550e7894dd3b92024-03-27T13:57:38ZengMDPI AGNanomaterials2079-49912024-03-0114653910.3390/nano14060539Characterization of Mn<sub>5</sub>Ge<sub>3</sub> Contacts on a Shallow Ge/SiGe HeterostructureTroy A. Hutchins-Delgado0Sadhvikas J. Addamane1Ping Lu2Tzu-Ming Lu3Sandia National Laboratories, Albuquerque, NM 87185, USASandia National Laboratories, Albuquerque, NM 87185, USASandia National Laboratories, Albuquerque, NM 87185, USASandia National Laboratories, Albuquerque, NM 87185, USA<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">M</mi><msub><mi mathvariant="normal">n</mi><mn>5</mn></msub><mi mathvariant="normal">G</mi><msub><mi mathvariant="normal">e</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula> is a ferromagnetic phase of the Mn-Ge system that is a potential contact material for efficient spin injection and detection. Here, we investigate the creation of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">M</mi><msub><mi mathvariant="normal">n</mi><mn>5</mn></msub><mi mathvariant="normal">G</mi><msub><mi mathvariant="normal">e</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>-based contacts on a Ge/SiGe quantum well heterostructure via solid-state synthesis. X-ray diffraction spectra fitting indicates the formation of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">M</mi><msub><mi mathvariant="normal">n</mi><mn>5</mn></msub><mi mathvariant="normal">G</mi><msub><mi mathvariant="normal">e</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>-based contacts on bulk Ge and Ge/SiGe. High-resolution scanning transmission electron microscopy imaging and energy dispersive X-ray spectroscopy verify the correct <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">M</mi><msub><mi mathvariant="normal">n</mi><mn>5</mn></msub><mi mathvariant="normal">G</mi><msub><mi mathvariant="normal">e</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>-based phase formation. Schottky diode measurements, transmission line measurements, and Hall measurements reveal that <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">M</mi><msub><mi mathvariant="normal">n</mi><mn>5</mn></msub><mi mathvariant="normal">G</mi><msub><mi mathvariant="normal">e</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>-based contacts serve as good p-type contacts for Ge/SiGe quantum well heterostructures due to having a low Schottky barrier height of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>0.10</mn></mrow></semantics></math></inline-formula><inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">e</mi><mspace width="-0.21251pt"></mspace><mi mathvariant="normal">V</mi></mrow></semantics></math></inline-formula> (extracted from a <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">M</mi><msub><mi mathvariant="normal">n</mi><mn>5</mn></msub><mi mathvariant="normal">G</mi><msub><mi mathvariant="normal">e</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>/n-Ge analogue) and a contact resistance in the order of 1 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="normal">k</mi></semantics></math></inline-formula><inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">Ω</mi></semantics></math></inline-formula>. Furthermore, we show that these electrical characteristics have a gate-voltage dependence, thereby providing tunability.https://www.mdpi.com/2079-4991/14/6/539Mn5Ge3Ge/SiGethin filmgermanidephase formationsolid-state synthesis |
| spellingShingle | Troy A. Hutchins-Delgado Sadhvikas J. Addamane Ping Lu Tzu-Ming Lu Characterization of Mn<sub>5</sub>Ge<sub>3</sub> Contacts on a Shallow Ge/SiGe Heterostructure Nanomaterials Mn5Ge3 Ge/SiGe thin film germanide phase formation solid-state synthesis |
| title | Characterization of Mn<sub>5</sub>Ge<sub>3</sub> Contacts on a Shallow Ge/SiGe Heterostructure |
| title_full | Characterization of Mn<sub>5</sub>Ge<sub>3</sub> Contacts on a Shallow Ge/SiGe Heterostructure |
| title_fullStr | Characterization of Mn<sub>5</sub>Ge<sub>3</sub> Contacts on a Shallow Ge/SiGe Heterostructure |
| title_full_unstemmed | Characterization of Mn<sub>5</sub>Ge<sub>3</sub> Contacts on a Shallow Ge/SiGe Heterostructure |
| title_short | Characterization of Mn<sub>5</sub>Ge<sub>3</sub> Contacts on a Shallow Ge/SiGe Heterostructure |
| title_sort | characterization of mn sub 5 sub ge sub 3 sub contacts on a shallow ge sige heterostructure |
| topic | Mn5Ge3 Ge/SiGe thin film germanide phase formation solid-state synthesis |
| url | https://www.mdpi.com/2079-4991/14/6/539 |
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