Characterization of Mn<sub>5</sub>Ge<sub>3</sub> Contacts on a Shallow Ge/SiGe Heterostructure
<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">M</mi><msub><mi mathvariant="normal">n</mi><mn>5</mn></msub><...
Main Authors: | Troy A. Hutchins-Delgado, Sadhvikas J. Addamane, Ping Lu, Tzu-Ming Lu |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2024-03-01
|
Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/14/6/539 |
Similar Items
-
Self-Organized Ge Nanospherical Gate/SiO<sub>2</sub>/Si<sub>0.15</sub>Ge<sub>0.85</sub>–Nanosheet n-FETs Featuring High ON-OFF Drain Current Ratio
by: Po-Hsiang Liao, et al.
Published: (2019-01-01) -
Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors
by: Wei-Ting eLai, et al.
Published: (2016-02-01) -
Sub-THz and THz SiGe HBT Electrical Compact Modeling
by: Bishwadeep Saha, et al.
Published: (2021-06-01) -
Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline SiGe n-Type FinFET With Low Off State Leakage and High I<sub>ON</sub>/I<sub>OFF</sub> Ratio
by: Chong-Jhe Sun, et al.
Published: (2020-01-01) -
MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
by: Fitzgerald, Eugene A., et al.
Published: (2003)