Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps
This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, ch...
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MDPI AG
2018-08-01
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| Series: | Sensors |
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| Online Access: | http://www.mdpi.com/1424-8220/18/9/2800 |
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| author | Jheng-Jie Liu Wen-Jeng Ho Cho-Chun Chiang Chi-Jen Teng Chia-Chun Yu Yen-Chu Li |
| author_facet | Jheng-Jie Liu Wen-Jeng Ho Cho-Chun Chiang Chi-Jen Teng Chia-Chun Yu Yen-Chu Li |
| author_sort | Jheng-Jie Liu |
| collection | DOAJ |
| description | This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, charge, and multiplication (SAGCM) epitaxial-structure. An electric field-profile of the SAGCM layers was derived from the epitaxial structure. The punch-through voltage of the SAGCM APD was controlled to within 16–17 V, whereas the breakdown voltage (VBR) was controlled to within 28–29 V. We obtained dark current of 2.99 nA, capacitance of 0.226 pF, and multiplication gain of 12, when the APD was biased at 0.9 VBR at room temperature. The frequency-response was characterized by comparing the calculated 3-dB cut-off modulation-frequency (f3-dB) and f3-dB values measured under various multiplication gains and modulated incident powers. The time-response of the APD was evaluated by deriving eye-diagrams at 0.9 VBR using pseudorandom non-return to zero codes with a length of 231-1 at 10–12.5 Gbps. There was a notable absence of intersymbol-interference, and the signals remained error-free at data-rates of up to 12.5 Gbps. The correlation between the rise-time and modulated-bandwidth demonstrate the suitability of the proposed SAGCM-APD chip for applications involving an optical-receiver at data-rates of >10 Gbps. |
| first_indexed | 2024-04-11T22:24:28Z |
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| id | doaj.art-2eb6163a54e14232a09e1502f2610cee |
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| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-11T22:24:28Z |
| publishDate | 2018-08-01 |
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| series | Sensors |
| spelling | doaj.art-2eb6163a54e14232a09e1502f2610cee2022-12-22T03:59:52ZengMDPI AGSensors1424-82202018-08-01189280010.3390/s18092800s18092800Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 GbpsJheng-Jie Liu0Wen-Jeng Ho1Cho-Chun Chiang2Chi-Jen Teng3Chia-Chun Yu4Yen-Chu Li5Department of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Section 3, Zhongxial East Road, Taipei 10608, TaiwanDepartment of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Section 3, Zhongxial East Road, Taipei 10608, TaiwanDepartment of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Section 3, Zhongxial East Road, Taipei 10608, TaiwanTyntek Corp., No. 15, Kejung Rd., Chunan Science Park, Chunan, Miaoli County 350, TaiwanTyntek Corp., No. 15, Kejung Rd., Chunan Science Park, Chunan, Miaoli County 350, TaiwanTyntek Corp., No. 15, Kejung Rd., Chunan Science Park, Chunan, Miaoli County 350, TaiwanThis paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, charge, and multiplication (SAGCM) epitaxial-structure. An electric field-profile of the SAGCM layers was derived from the epitaxial structure. The punch-through voltage of the SAGCM APD was controlled to within 16–17 V, whereas the breakdown voltage (VBR) was controlled to within 28–29 V. We obtained dark current of 2.99 nA, capacitance of 0.226 pF, and multiplication gain of 12, when the APD was biased at 0.9 VBR at room temperature. The frequency-response was characterized by comparing the calculated 3-dB cut-off modulation-frequency (f3-dB) and f3-dB values measured under various multiplication gains and modulated incident powers. The time-response of the APD was evaluated by deriving eye-diagrams at 0.9 VBR using pseudorandom non-return to zero codes with a length of 231-1 at 10–12.5 Gbps. There was a notable absence of intersymbol-interference, and the signals remained error-free at data-rates of up to 12.5 Gbps. The correlation between the rise-time and modulated-bandwidth demonstrate the suitability of the proposed SAGCM-APD chip for applications involving an optical-receiver at data-rates of >10 Gbps.http://www.mdpi.com/1424-8220/18/9/2800avalanche photodetector (APD)separate absorptiongradingcharge and multiplication (SAGCM)multiplication gainmodulation frequencyeye diagram |
| spellingShingle | Jheng-Jie Liu Wen-Jeng Ho Cho-Chun Chiang Chi-Jen Teng Chia-Chun Yu Yen-Chu Li Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps Sensors avalanche photodetector (APD) separate absorption grading charge and multiplication (SAGCM) multiplication gain modulation frequency eye diagram |
| title | Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps |
| title_full | Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps |
| title_fullStr | Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps |
| title_full_unstemmed | Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps |
| title_short | Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps |
| title_sort | fabrication and characterization of planar type top illuminated inp based avalanche photodetector on conductive substrate with operating speeds exceeding 10 gbps |
| topic | avalanche photodetector (APD) separate absorption grading charge and multiplication (SAGCM) multiplication gain modulation frequency eye diagram |
| url | http://www.mdpi.com/1424-8220/18/9/2800 |
| work_keys_str_mv | AT jhengjieliu fabricationandcharacterizationofplanartypetopilluminatedinpbasedavalanchephotodetectoronconductivesubstratewithoperatingspeedsexceeding10gbps AT wenjengho fabricationandcharacterizationofplanartypetopilluminatedinpbasedavalanchephotodetectoronconductivesubstratewithoperatingspeedsexceeding10gbps AT chochunchiang fabricationandcharacterizationofplanartypetopilluminatedinpbasedavalanchephotodetectoronconductivesubstratewithoperatingspeedsexceeding10gbps AT chijenteng fabricationandcharacterizationofplanartypetopilluminatedinpbasedavalanchephotodetectoronconductivesubstratewithoperatingspeedsexceeding10gbps AT chiachunyu fabricationandcharacterizationofplanartypetopilluminatedinpbasedavalanchephotodetectoronconductivesubstratewithoperatingspeedsexceeding10gbps AT yenchuli fabricationandcharacterizationofplanartypetopilluminatedinpbasedavalanchephotodetectoronconductivesubstratewithoperatingspeedsexceeding10gbps |