Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps
This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, ch...
Main Authors: | Jheng-Jie Liu, Wen-Jeng Ho, Cho-Chun Chiang, Chi-Jen Teng, Chia-Chun Yu, Yen-Chu Li |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2018-08-01
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Series: | Sensors |
Subjects: | |
Online Access: | http://www.mdpi.com/1424-8220/18/9/2800 |
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