Optically Active Telecom Defects in MoTe<sub>2</sub> Fewlayers at Room Temperature
The optical and electrical properties of semiconductors are strongly affected by defect states. The defects in molybdenum ditelluride (MoTe<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></m...
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MDPI AG
2023-04-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/9/1501 |
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| author | Yuxin Lei Qiaoling Lin Sanshui Xiao Juntao Li Hanlin Fang |
| author_facet | Yuxin Lei Qiaoling Lin Sanshui Xiao Juntao Li Hanlin Fang |
| author_sort | Yuxin Lei |
| collection | DOAJ |
| description | The optical and electrical properties of semiconductors are strongly affected by defect states. The defects in molybdenum ditelluride (MoTe<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>) show the potential for quantum light emission at optical fiber communication bands. However, the observation of defect-related light emission is still limited to cryogenic temperatures. In this work, we demonstrate the deep defect states in MoTe<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula> fewlayers produced via a standard van der Waal material transfer method with a heating process, which enables light emission in the telecommunication O-band. The optical measurements show evidence of localized excitons and strong interaction among defects. Furthermore, the optical emission of defects depends on the thickness of the host materials. Our findings offer a new route for tailoring the optical properties of two-dimensional materials in optoelectronic applications. |
| first_indexed | 2024-03-11T04:10:50Z |
| format | Article |
| id | doaj.art-2ec40a89080b455da1cd54c18b1fa1a7 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T04:10:50Z |
| publishDate | 2023-04-01 |
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| series | Nanomaterials |
| spelling | doaj.art-2ec40a89080b455da1cd54c18b1fa1a72023-11-17T23:26:54ZengMDPI AGNanomaterials2079-49912023-04-01139150110.3390/nano13091501Optically Active Telecom Defects in MoTe<sub>2</sub> Fewlayers at Room TemperatureYuxin Lei0Qiaoling Lin1Sanshui Xiao2Juntao Li3Hanlin Fang4State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, ChinaDepartment of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kongens Lyngby, DenmarkDepartment of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kongens Lyngby, DenmarkState Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, ChinaDepartment of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, 41296 Gothenburg, SwedenThe optical and electrical properties of semiconductors are strongly affected by defect states. The defects in molybdenum ditelluride (MoTe<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula>) show the potential for quantum light emission at optical fiber communication bands. However, the observation of defect-related light emission is still limited to cryogenic temperatures. In this work, we demonstrate the deep defect states in MoTe<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mrow></mrow><mn>2</mn></msub></semantics></math></inline-formula> fewlayers produced via a standard van der Waal material transfer method with a heating process, which enables light emission in the telecommunication O-band. The optical measurements show evidence of localized excitons and strong interaction among defects. Furthermore, the optical emission of defects depends on the thickness of the host materials. Our findings offer a new route for tailoring the optical properties of two-dimensional materials in optoelectronic applications.https://www.mdpi.com/2079-4991/13/9/1501MoTe<sub>2</sub>defectoptical fiber communication |
| spellingShingle | Yuxin Lei Qiaoling Lin Sanshui Xiao Juntao Li Hanlin Fang Optically Active Telecom Defects in MoTe<sub>2</sub> Fewlayers at Room Temperature Nanomaterials MoTe<sub>2</sub> defect optical fiber communication |
| title | Optically Active Telecom Defects in MoTe<sub>2</sub> Fewlayers at Room Temperature |
| title_full | Optically Active Telecom Defects in MoTe<sub>2</sub> Fewlayers at Room Temperature |
| title_fullStr | Optically Active Telecom Defects in MoTe<sub>2</sub> Fewlayers at Room Temperature |
| title_full_unstemmed | Optically Active Telecom Defects in MoTe<sub>2</sub> Fewlayers at Room Temperature |
| title_short | Optically Active Telecom Defects in MoTe<sub>2</sub> Fewlayers at Room Temperature |
| title_sort | optically active telecom defects in mote sub 2 sub fewlayers at room temperature |
| topic | MoTe<sub>2</sub> defect optical fiber communication |
| url | https://www.mdpi.com/2079-4991/13/9/1501 |
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