Evolution of electrical performance of ZnO-based thin-film transistors by low temperature annealing

Evolution of electrical performance of ZnO-based thin-film transistors by low temperature annealing

The effects of post-annealing on performance of ZnO-based thin-film transistors (TFTs) fabricated at room temperature were investigated. It was observed that high-temperature annealing resulted in a large decrease in resistivity of the ZnO channel layer and caused a large off-state current for ZnO T...

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Bibliografiska uppgifter
Huvudupphovsmän: J. Zhang, X. F. Li, J. G. Lu, P. Wu, J. Huang, Q. Wang, B. Lu, Y. Z. Zhang, B. H. Zhao, Z. Z. Ye
Materialtyp: Artikel
Språk:English
Publicerad: AIP Publishing LLC 2012-06-01
Serie:AIP Advances
Länkar:http://dx.doi.org/10.1063/1.4711046

Internet

http://dx.doi.org/10.1063/1.4711046

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