Gate-modulated thermopower in disordered nanowires: I. Low temperature coherent regime
Using a one-dimensional tight-binding Anderson model, we study a disordered nanowire in the presence of an external gate which can be used for depleting its carrier density (field effect transistor device configuration). In this first paper, we consider the low temperature coherent regime where the...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2014-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/16/3/035004 |
| _version_ | 1797751426833711104 |
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| author | Riccardo Bosisio Geneviève Fleury Jean-Louis Pichard |
| author_facet | Riccardo Bosisio Geneviève Fleury Jean-Louis Pichard |
| author_sort | Riccardo Bosisio |
| collection | DOAJ |
| description | Using a one-dimensional tight-binding Anderson model, we study a disordered nanowire in the presence of an external gate which can be used for depleting its carrier density (field effect transistor device configuration). In this first paper, we consider the low temperature coherent regime where the electron transmission through the nanowire remains elastic. In the limit where the nanowire length exceeds the electron localization length, we derive three analytical expressions for the typical value of the thermopower as a function of the gate potential, in the cases where the electron transport takes place (i) inside the impurity band of the nanowire, (ii) around its band edges and eventually (iii) outside its band. We obtain a very large enhancement of the typical thermopower at the band edges, while the sample to sample fluctuations around the typical value exhibit a sharp crossover from a Lorentzian distribution inside the impurity band towards a Gaussian distribution as the band edges are approached. |
| first_indexed | 2024-03-12T16:49:21Z |
| format | Article |
| id | doaj.art-2eed1d12e9184658b1d484ee2a843ebc |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:49:21Z |
| publishDate | 2014-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-2eed1d12e9184658b1d484ee2a843ebc2023-08-08T11:25:47ZengIOP PublishingNew Journal of Physics1367-26302014-01-0116303500410.1088/1367-2630/16/3/035004Gate-modulated thermopower in disordered nanowires: I. Low temperature coherent regimeRiccardo Bosisio0Geneviève Fleury1Jean-Louis Pichard2Service de Physique de l’État Condensé (CNRS URA 2464) , IRAMIS/SPEC, CEA Saclay, 91191 Gif-sur-Yvette, FranceService de Physique de l’État Condensé (CNRS URA 2464) , IRAMIS/SPEC, CEA Saclay, 91191 Gif-sur-Yvette, FranceService de Physique de l’État Condensé (CNRS URA 2464) , IRAMIS/SPEC, CEA Saclay, 91191 Gif-sur-Yvette, FranceUsing a one-dimensional tight-binding Anderson model, we study a disordered nanowire in the presence of an external gate which can be used for depleting its carrier density (field effect transistor device configuration). In this first paper, we consider the low temperature coherent regime where the electron transmission through the nanowire remains elastic. In the limit where the nanowire length exceeds the electron localization length, we derive three analytical expressions for the typical value of the thermopower as a function of the gate potential, in the cases where the electron transport takes place (i) inside the impurity band of the nanowire, (ii) around its band edges and eventually (iii) outside its band. We obtain a very large enhancement of the typical thermopower at the band edges, while the sample to sample fluctuations around the typical value exhibit a sharp crossover from a Lorentzian distribution inside the impurity band towards a Gaussian distribution as the band edges are approached.https://doi.org/10.1088/1367-2630/16/3/035004thermoelectricitynanowiresthermopowerAnderson localizationspectrum edge72.20.Pa |
| spellingShingle | Riccardo Bosisio Geneviève Fleury Jean-Louis Pichard Gate-modulated thermopower in disordered nanowires: I. Low temperature coherent regime New Journal of Physics thermoelectricity nanowires thermopower Anderson localization spectrum edge 72.20.Pa |
| title | Gate-modulated thermopower in disordered nanowires: I. Low temperature coherent regime |
| title_full | Gate-modulated thermopower in disordered nanowires: I. Low temperature coherent regime |
| title_fullStr | Gate-modulated thermopower in disordered nanowires: I. Low temperature coherent regime |
| title_full_unstemmed | Gate-modulated thermopower in disordered nanowires: I. Low temperature coherent regime |
| title_short | Gate-modulated thermopower in disordered nanowires: I. Low temperature coherent regime |
| title_sort | gate modulated thermopower in disordered nanowires i low temperature coherent regime |
| topic | thermoelectricity nanowires thermopower Anderson localization spectrum edge 72.20.Pa |
| url | https://doi.org/10.1088/1367-2630/16/3/035004 |
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