Crystallization of HfO2 thin films and their influence on laser induced damage

Crystallization of HfO2 thin films and their influence on laser induced damage

We present our investigation on the crystallization of IBS HfO2 on (0001) SiO2. The crystallization was studied by in-situ XRD. The activation energy was 2.6±0.5 eV. The growth follows a two-dimensional mode. LIDT measurements (5000-on-1) with 10 ns pulses at 355 nm on 3QWT HfO2 layers shows that th...

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Bibliographic Details
Main Authors: Balogh-Michels Zoltán, Stevanovic Igor, Frison Ruggero, Bächli Andreas, Schachtler Daniel, Gischkat Thomas, Neels Antonia, Stuck Alexander, Botha Roelene
Format: Article
Language:English
Published: EDP Sciences 2020-01-01
Series:EPJ Web of Conferences
Online Access:https://www.epj-conferences.org/articles/epjconf/pdf/2020/14/epjconf_eosam2020_12004.pdf

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