Near-IR & Mid-IR Silicon Photonics Modulators
As the silicon photonics field matures and a data-hungry future looms ahead, new technologies are required to keep up pace with the increase in capacity demand. In this paper, we review current developments in the near-IR and mid-IR group IV photonic modulators that show promising performance. We an...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-12-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/22/24/9620 |
| _version_ | 1797455363631480832 |
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| author | Georgi V. Georgiev Wei Cao Weiwei Zhang Li Ke David J. Thomson Graham T. Reed Milos Nedeljkovic Goran Z. Mashanovich |
| author_facet | Georgi V. Georgiev Wei Cao Weiwei Zhang Li Ke David J. Thomson Graham T. Reed Milos Nedeljkovic Goran Z. Mashanovich |
| author_sort | Georgi V. Georgiev |
| collection | DOAJ |
| description | As the silicon photonics field matures and a data-hungry future looms ahead, new technologies are required to keep up pace with the increase in capacity demand. In this paper, we review current developments in the near-IR and mid-IR group IV photonic modulators that show promising performance. We analyse recent trends in optical and electrical co-integration of modulators and drivers enabling modulation data rates of 112 GBaud in the near infrared. We then describe new developments in short wave infrared spectrum modulators such as employing more spectrally efficient PAM-4 coding schemes for modulations up to 40 GBaud. Finally, we review recent results at the mid infrared spectrum and application of the thermo-optic effect for modulation as well as the emergence of new platforms based on germanium to tackle the challenges of modulating light in the long wave infrared spectrum up to 10.7 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m with data rates of 225 MBaud. |
| first_indexed | 2024-03-09T15:53:08Z |
| format | Article |
| id | doaj.art-2f10fae1fbd1423584dd5208750c29f4 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-09T15:53:08Z |
| publishDate | 2022-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-2f10fae1fbd1423584dd5208750c29f42023-11-24T17:52:33ZengMDPI AGSensors1424-82202022-12-012224962010.3390/s22249620Near-IR & Mid-IR Silicon Photonics ModulatorsGeorgi V. Georgiev0Wei Cao1Weiwei Zhang2Li Ke3David J. Thomson4Graham T. Reed5Milos Nedeljkovic6Goran Z. Mashanovich7Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UKOptoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UKOptoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UKOptoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UKOptoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UKOptoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UKOptoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UKOptoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UKAs the silicon photonics field matures and a data-hungry future looms ahead, new technologies are required to keep up pace with the increase in capacity demand. In this paper, we review current developments in the near-IR and mid-IR group IV photonic modulators that show promising performance. We analyse recent trends in optical and electrical co-integration of modulators and drivers enabling modulation data rates of 112 GBaud in the near infrared. We then describe new developments in short wave infrared spectrum modulators such as employing more spectrally efficient PAM-4 coding schemes for modulations up to 40 GBaud. Finally, we review recent results at the mid infrared spectrum and application of the thermo-optic effect for modulation as well as the emergence of new platforms based on germanium to tackle the challenges of modulating light in the long wave infrared spectrum up to 10.7 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="sans-serif">μ</mi></semantics></math></inline-formula>m with data rates of 225 MBaud.https://www.mdpi.com/1424-8220/22/24/9620modulatorssilicon photonicsdepletionPAM-4germanium |
| spellingShingle | Georgi V. Georgiev Wei Cao Weiwei Zhang Li Ke David J. Thomson Graham T. Reed Milos Nedeljkovic Goran Z. Mashanovich Near-IR & Mid-IR Silicon Photonics Modulators Sensors modulators silicon photonics depletion PAM-4 germanium |
| title | Near-IR & Mid-IR Silicon Photonics Modulators |
| title_full | Near-IR & Mid-IR Silicon Photonics Modulators |
| title_fullStr | Near-IR & Mid-IR Silicon Photonics Modulators |
| title_full_unstemmed | Near-IR & Mid-IR Silicon Photonics Modulators |
| title_short | Near-IR & Mid-IR Silicon Photonics Modulators |
| title_sort | near ir mid ir silicon photonics modulators |
| topic | modulators silicon photonics depletion PAM-4 germanium |
| url | https://www.mdpi.com/1424-8220/22/24/9620 |
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