Improving the photovoltaic parameters in CdS quantum dot sensitized SnO<sub>2</sub> based solar cells through incorporation of chemically deposited compact SnO<sub>2</sub> layer
Mitigation of the recombination of electrons within the quantum dot sensitized solar cells (QDSSCs) and hence the improvement in the performances of the devices can be achieved by incorporation of a compact layer in between the transparent conducting substrate and the semiconducting materials used i...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Faculty of Science, University of Peradeniya, Sri Lanka
2021-09-01
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| Series: | Ceylon Journal of Science |
| Subjects: | |
| Online Access: | https://cjs.sljol.info/articles/7905 |
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| author | T. S. M. Liyanage T. Jaseetharan W. I. Sandamali M. A. K. L. Dissanayake V. P. S. Perera J. C. N. Rajendra N. Karthikeyan G. K. R. Senadeera |
| author_facet | T. S. M. Liyanage T. Jaseetharan W. I. Sandamali M. A. K. L. Dissanayake V. P. S. Perera J. C. N. Rajendra N. Karthikeyan G. K. R. Senadeera |
| author_sort | T. S. M. Liyanage |
| collection | DOAJ |
| description | Mitigation of the recombination of electrons within the quantum dot sensitized solar cells (QDSSCs) and hence the improvement in the performances of the devices can be achieved by incorporation of a compact layer in between the transparent conducting substrate and the semiconducting materials used in these devices. In this work, a facile and cost-effective method of incorporation of a compact layer of SnO<sub>2</sub> over the Fluorine doped Tin oxide (FTO) substrate and its effect on the efficiency enhancement of the CdS sensitized SnO<sub>2</sub> QDSSCs have been studied by means of current-voltage characteristics, Electrochemical Impedance Spectroscopy, and electron lifetime estimation. The incorporation of SnO<sub>2</sub> compact layer improved the overall efficiency of the device by 250% as compared with the devices fabricated with no compact layer under the illumination of 100 mWcm<sup>-2</sup>. The improvement in the open-circuit voltage and the significant enhancement in the short circuit current density (~200%) together with the increase in the electron lifetime in the QDSSC with compact layer suggested that the compact layer has acted as a weak energy barrier, which increased the electron density in the mesoporous SnO<sub>2</sub> film. The enhancement in the short circuit current density and the efficiency mainly stems due to the decrease in the series resistance and the increase in the recombination resistance of the device fabricated with the compact layer. |
| first_indexed | 2024-04-12T00:13:33Z |
| format | Article |
| id | doaj.art-2f410c4362034c11a90ad6beecf83192 |
| institution | Directory Open Access Journal |
| issn | 2513-2814 2513-230X |
| language | English |
| last_indexed | 2024-04-12T00:13:33Z |
| publishDate | 2021-09-01 |
| publisher | Faculty of Science, University of Peradeniya, Sri Lanka |
| record_format | Article |
| series | Ceylon Journal of Science |
| spelling | doaj.art-2f410c4362034c11a90ad6beecf831922022-12-22T03:55:54ZengFaculty of Science, University of Peradeniya, Sri LankaCeylon Journal of Science2513-28142513-230X2021-09-0150324324810.4038/cjs.v50i3.79055875Improving the photovoltaic parameters in CdS quantum dot sensitized SnO<sub>2</sub> based solar cells through incorporation of chemically deposited compact SnO<sub>2</sub> layerT. S. M. Liyanage0T. Jaseetharan1W. I. Sandamali2M. A. K. L. Dissanayake3V. P. S. Perera4J. C. N. Rajendra5N. Karthikeyan6G. K. R. Senadeera7National Institute of Fundamental Studies, Hantana Road, KandyNational Institute of Fundamental Studies, Hantana Road, KandyNational Institute of Fundamental Studies, Hantana Road, KandyNational Institute of Fundamental Studies, Hantana Road, KandyThe Open University of Sri Lanka, Nawala, NugegodaThe Open University of Sri Lanka, Nawala, NugegodaThe Open University of Sri Lanka, Nawala, NugegodaNational Institute of Fundamental Studies, Hantana Road, KandyMitigation of the recombination of electrons within the quantum dot sensitized solar cells (QDSSCs) and hence the improvement in the performances of the devices can be achieved by incorporation of a compact layer in between the transparent conducting substrate and the semiconducting materials used in these devices. In this work, a facile and cost-effective method of incorporation of a compact layer of SnO<sub>2</sub> over the Fluorine doped Tin oxide (FTO) substrate and its effect on the efficiency enhancement of the CdS sensitized SnO<sub>2</sub> QDSSCs have been studied by means of current-voltage characteristics, Electrochemical Impedance Spectroscopy, and electron lifetime estimation. The incorporation of SnO<sub>2</sub> compact layer improved the overall efficiency of the device by 250% as compared with the devices fabricated with no compact layer under the illumination of 100 mWcm<sup>-2</sup>. The improvement in the open-circuit voltage and the significant enhancement in the short circuit current density (~200%) together with the increase in the electron lifetime in the QDSSC with compact layer suggested that the compact layer has acted as a weak energy barrier, which increased the electron density in the mesoporous SnO<sub>2</sub> film. The enhancement in the short circuit current density and the efficiency mainly stems due to the decrease in the series resistance and the increase in the recombination resistance of the device fabricated with the compact layer.https://cjs.sljol.info/articles/7905sno2 compact layer, cds sensitization, silar, sno2 photoanode |
| spellingShingle | T. S. M. Liyanage T. Jaseetharan W. I. Sandamali M. A. K. L. Dissanayake V. P. S. Perera J. C. N. Rajendra N. Karthikeyan G. K. R. Senadeera Improving the photovoltaic parameters in CdS quantum dot sensitized SnO<sub>2</sub> based solar cells through incorporation of chemically deposited compact SnO<sub>2</sub> layer Ceylon Journal of Science sno2 compact layer, cds sensitization, silar, sno2 photoanode |
| title | Improving the photovoltaic parameters in CdS quantum dot sensitized SnO<sub>2</sub> based solar cells through incorporation of chemically deposited compact SnO<sub>2</sub> layer |
| title_full | Improving the photovoltaic parameters in CdS quantum dot sensitized SnO<sub>2</sub> based solar cells through incorporation of chemically deposited compact SnO<sub>2</sub> layer |
| title_fullStr | Improving the photovoltaic parameters in CdS quantum dot sensitized SnO<sub>2</sub> based solar cells through incorporation of chemically deposited compact SnO<sub>2</sub> layer |
| title_full_unstemmed | Improving the photovoltaic parameters in CdS quantum dot sensitized SnO<sub>2</sub> based solar cells through incorporation of chemically deposited compact SnO<sub>2</sub> layer |
| title_short | Improving the photovoltaic parameters in CdS quantum dot sensitized SnO<sub>2</sub> based solar cells through incorporation of chemically deposited compact SnO<sub>2</sub> layer |
| title_sort | improving the photovoltaic parameters in cds quantum dot sensitized sno sub 2 sub based solar cells through incorporation of chemically deposited compact sno sub 2 sub layer |
| topic | sno2 compact layer, cds sensitization, silar, sno2 photoanode |
| url | https://cjs.sljol.info/articles/7905 |
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