MODEL OF BORON CLUSTERING IN SILICON

MODEL OF BORON CLUSTERING IN SILICON

The model of formation and dissolution of neutral boron clusters in silicon has been developed. Numerical calculations showed that the model proposed describes well the experimental data obtained for rapid thermal annealing. Agreement with experiment is observed for clusters incorporating a small nu...

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Bibliographic Details
Main Author: O. I. Velichko
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
boron
silicon
clustering
stresses
annealing
Online Access:https://doklady.bsuir.by/jour/article/view/808

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