General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect

Mechanical anisotropy and point defects would greatly affect the product quality while producing silicon wafers via diamond-wire cutting. For three major orientations concerned in wafer production, their mechanical performances under the nanoscale effects of a point defect were systematically invest...

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Main Authors: Wei Wan, Changxin Tang, Jianjie Zhang, Lang Zhou
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/11/8/1965
_version_ 1797522617320603648
author Wei Wan
Changxin Tang
Jianjie Zhang
Lang Zhou
author_facet Wei Wan
Changxin Tang
Jianjie Zhang
Lang Zhou
author_sort Wei Wan
collection DOAJ
description Mechanical anisotropy and point defects would greatly affect the product quality while producing silicon wafers via diamond-wire cutting. For three major orientations concerned in wafer production, their mechanical performances under the nanoscale effects of a point defect were systematically investigated through molecular dynamics methods. The results indicated anisotropic mechanical performance with fracture phenomena in the uniaxial deformation process of monocrystalline silicon. Exponential reduction caused by the point defect has been demonstrated for some properties like yield strength and elastic strain energy release. Dislocation analysis suggested that the slip of dislocations appeared and created hexagonal diamond structures with stacking faults in the [100] orientation. Meanwhile, no dislocation was observed in [110] and [111] orientations. Visualization of atomic stress proved that the extreme stress regions of the simulation models exhibited different geometric and numerical characteristics due to the mechanical anisotropy. Moreover, the regional evolution of stress concentration and crystal fracture were interrelated and mutually promoted. This article contributes to the research towards the mechanical and fracture anisotropy of monocrystalline silicon.
first_indexed 2024-03-10T08:31:58Z
format Article
id doaj.art-2fbfb005ff0c489dae6c7e3d7debe30f
institution Directory Open Access Journal
issn 2079-4991
language English
last_indexed 2024-03-10T08:31:58Z
publishDate 2021-07-01
publisher MDPI AG
record_format Article
series Nanomaterials
spelling doaj.art-2fbfb005ff0c489dae6c7e3d7debe30f2023-11-22T08:58:26ZengMDPI AGNanomaterials2079-49912021-07-01118196510.3390/nano11081965General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point DefectWei Wan0Changxin Tang1Jianjie Zhang2Lang Zhou3Institute of Photovoltaics, Nanchang University, Nanchang 330031, ChinaInstitute of Photovoltaics, Nanchang University, Nanchang 330031, ChinaInstitute of Photovoltaics, Nanchang University, Nanchang 330031, ChinaInstitute of Photovoltaics, Nanchang University, Nanchang 330031, ChinaMechanical anisotropy and point defects would greatly affect the product quality while producing silicon wafers via diamond-wire cutting. For three major orientations concerned in wafer production, their mechanical performances under the nanoscale effects of a point defect were systematically investigated through molecular dynamics methods. The results indicated anisotropic mechanical performance with fracture phenomena in the uniaxial deformation process of monocrystalline silicon. Exponential reduction caused by the point defect has been demonstrated for some properties like yield strength and elastic strain energy release. Dislocation analysis suggested that the slip of dislocations appeared and created hexagonal diamond structures with stacking faults in the [100] orientation. Meanwhile, no dislocation was observed in [110] and [111] orientations. Visualization of atomic stress proved that the extreme stress regions of the simulation models exhibited different geometric and numerical characteristics due to the mechanical anisotropy. Moreover, the regional evolution of stress concentration and crystal fracture were interrelated and mutually promoted. This article contributes to the research towards the mechanical and fracture anisotropy of monocrystalline silicon.https://www.mdpi.com/2079-4991/11/8/1965molecular dynamicsmonocrystalline siliconmechanical anisotropypoint defect
spellingShingle Wei Wan
Changxin Tang
Jianjie Zhang
Lang Zhou
General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect
Nanomaterials
molecular dynamics
monocrystalline silicon
mechanical anisotropy
point defect
title General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect
title_full General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect
title_fullStr General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect
title_full_unstemmed General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect
title_short General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect
title_sort general molecular dynamics approach to understand the mechanical anisotropy of monocrystalline silicon under the nanoscale effects of point defect
topic molecular dynamics
monocrystalline silicon
mechanical anisotropy
point defect
url https://www.mdpi.com/2079-4991/11/8/1965
work_keys_str_mv AT weiwan generalmoleculardynamicsapproachtounderstandthemechanicalanisotropyofmonocrystallinesiliconunderthenanoscaleeffectsofpointdefect
AT changxintang generalmoleculardynamicsapproachtounderstandthemechanicalanisotropyofmonocrystallinesiliconunderthenanoscaleeffectsofpointdefect
AT jianjiezhang generalmoleculardynamicsapproachtounderstandthemechanicalanisotropyofmonocrystallinesiliconunderthenanoscaleeffectsofpointdefect
AT langzhou generalmoleculardynamicsapproachtounderstandthemechanicalanisotropyofmonocrystallinesiliconunderthenanoscaleeffectsofpointdefect