Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor
In this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was investigated. The NFBFET has highly doped N-P junction in the channel region. When drain-source voltage is applied at the NFBFET, the aligning between conduction band of N-region and valence band of P-regi...
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MDPI AG
2022-08-01
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| Online Access: | https://www.mdpi.com/2072-666X/13/8/1329 |
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| author | Jong Hyeok Oh Yun Seop Yu |
| author_facet | Jong Hyeok Oh Yun Seop Yu |
| author_sort | Jong Hyeok Oh |
| collection | DOAJ |
| description | In this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was investigated. The NFBFET has highly doped N-P junction in the channel region. When drain-source voltage is applied at the NFBFET, the aligning between conduction band of N-region and valence band of P-region occur, and band-to-band tunneling (BTBT) current can be formed on surface region of N-P junction in the channel of the NFBFET. When the doping concentration of gated-channel region (<i>N<sub>gc</sub></i>) is 4 × 10<sup>18</sup> cm<sup>−3</sup>, the tunneling current makes off-currents increase approximately 10<sup>4</sup> times. As gate-source voltage is applied to NFBFET, the tunneling rate decreases owing to reducing of aligned region between bands by stronger gate-field. Eventually, the tunneling currents are vanished at the BTBT vanishing point before threshold voltage. When <i>N<sub>gc</sub></i> increase from 4 × 10<sup>18</sup> to 6 × 10<sup>18</sup>, the tunneling current is generated not only at the surface region but also at the bulk region. Moreover, the tunneling length is shorter at the surface and bulk regions, and hence the leakage currents more increase. The BTBT vanishing point also increases due to increase of tunneling rates at surface and bulk region as <i>N</i><sub>gc</sub> increases. |
| first_indexed | 2024-03-09T04:04:21Z |
| format | Article |
| id | doaj.art-2fc9f0c0240c4f8ca15faf7288ad605e |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T04:04:21Z |
| publishDate | 2022-08-01 |
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| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-2fc9f0c0240c4f8ca15faf7288ad605e2023-12-03T14:08:29ZengMDPI AGMicromachines2072-666X2022-08-01138132910.3390/mi13081329Investigation of Tunneling Effect for a N-Type Feedback Field-Effect TransistorJong Hyeok Oh0Yun Seop Yu1ICT & Robotics Engineering, Semiconductor Convergence Engineering, AISPC Laboratory and IITC, Hankyong National University, 327 Jungang-ro, Anseong-si 17579, Gyenggi-do, KoreaICT & Robotics Engineering, Semiconductor Convergence Engineering, AISPC Laboratory and IITC, Hankyong National University, 327 Jungang-ro, Anseong-si 17579, Gyenggi-do, KoreaIn this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was investigated. The NFBFET has highly doped N-P junction in the channel region. When drain-source voltage is applied at the NFBFET, the aligning between conduction band of N-region and valence band of P-region occur, and band-to-band tunneling (BTBT) current can be formed on surface region of N-P junction in the channel of the NFBFET. When the doping concentration of gated-channel region (<i>N<sub>gc</sub></i>) is 4 × 10<sup>18</sup> cm<sup>−3</sup>, the tunneling current makes off-currents increase approximately 10<sup>4</sup> times. As gate-source voltage is applied to NFBFET, the tunneling rate decreases owing to reducing of aligned region between bands by stronger gate-field. Eventually, the tunneling currents are vanished at the BTBT vanishing point before threshold voltage. When <i>N<sub>gc</sub></i> increase from 4 × 10<sup>18</sup> to 6 × 10<sup>18</sup>, the tunneling current is generated not only at the surface region but also at the bulk region. Moreover, the tunneling length is shorter at the surface and bulk regions, and hence the leakage currents more increase. The BTBT vanishing point also increases due to increase of tunneling rates at surface and bulk region as <i>N</i><sub>gc</sub> increases.https://www.mdpi.com/2072-666X/13/8/1329feedback field effect transistorband-to-band tunnelingleakage currenttunneling length |
| spellingShingle | Jong Hyeok Oh Yun Seop Yu Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor Micromachines feedback field effect transistor band-to-band tunneling leakage current tunneling length |
| title | Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor |
| title_full | Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor |
| title_fullStr | Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor |
| title_full_unstemmed | Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor |
| title_short | Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor |
| title_sort | investigation of tunneling effect for a n type feedback field effect transistor |
| topic | feedback field effect transistor band-to-band tunneling leakage current tunneling length |
| url | https://www.mdpi.com/2072-666X/13/8/1329 |
| work_keys_str_mv | AT jonghyeokoh investigationoftunnelingeffectforantypefeedbackfieldeffecttransistor AT yunseopyu investigationoftunnelingeffectforantypefeedbackfieldeffecttransistor |