Laser Processing For Nanoscale Size Quantum Wires of AlGaAs/GaAs

In this work we investigate and calculate theoretically the variation in a number of optoelectronic properties of AlGaAs/GaAs quantum wire laser, with emphasis on the effect of wire radius on the confinement factor, density of states and gain factor have been calculated. It is found that there exist...

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Main Authors: Ahlam H. Jaffer, Ebtisam M-T. Salman, Mohammed HamadJassam
Format: Article
Language:English
Published: University of Anbar 2014-02-01
Series:مجلة جامعة الانبار للعلوم الصرفة
Subjects:
Online Access:https://juaps.uoanbar.edu.iq/article_84996_234f5bbc22e77af35babd3a9cd6a4942.pdf
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author Ahlam H. Jaffer
Ebtisam M-T. Salman
Mohammed HamadJassam
author_facet Ahlam H. Jaffer
Ebtisam M-T. Salman
Mohammed HamadJassam
author_sort Ahlam H. Jaffer
collection DOAJ
description In this work we investigate and calculate theoretically the variation in a number of optoelectronic properties of AlGaAs/GaAs quantum wire laser, with emphasis on the effect of wire radius on the confinement factor, density of states and gain factor have been calculated. It is found that there exist a critical wire radius (rc) under which the confinement of carriers are very weak. Whereas, above rc the confinement factor and hence the gain increase with increasing the wire radius.
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spelling doaj.art-2fccd2a71cbc4b67a4924ac1ff8f4b5d2023-12-28T21:57:01ZengUniversity of Anbarمجلة جامعة الانبار للعلوم الصرفة1991-89412706-67032014-02-01721510.37652/juaps.2013.8499684996Laser Processing For Nanoscale Size Quantum Wires of AlGaAs/GaAsAhlam H. Jaffer0Ebtisam M-T. Salman1Mohammed HamadJassam2University of Baghdad - College of Education for pure ScienceBaghdad University - College of Education for Pure SciencesBaghdad University - College of Education for Pure SciencesIn this work we investigate and calculate theoretically the variation in a number of optoelectronic properties of AlGaAs/GaAs quantum wire laser, with emphasis on the effect of wire radius on the confinement factor, density of states and gain factor have been calculated. It is found that there exist a critical wire radius (rc) under which the confinement of carriers are very weak. Whereas, above rc the confinement factor and hence the gain increase with increasing the wire radius.https://juaps.uoanbar.edu.iq/article_84996_234f5bbc22e77af35babd3a9cd6a4942.pdfquantum wireconfinement factoroptical gain
spellingShingle Ahlam H. Jaffer
Ebtisam M-T. Salman
Mohammed HamadJassam
Laser Processing For Nanoscale Size Quantum Wires of AlGaAs/GaAs
مجلة جامعة الانبار للعلوم الصرفة
quantum wire
confinement factor
optical gain
title Laser Processing For Nanoscale Size Quantum Wires of AlGaAs/GaAs
title_full Laser Processing For Nanoscale Size Quantum Wires of AlGaAs/GaAs
title_fullStr Laser Processing For Nanoscale Size Quantum Wires of AlGaAs/GaAs
title_full_unstemmed Laser Processing For Nanoscale Size Quantum Wires of AlGaAs/GaAs
title_short Laser Processing For Nanoscale Size Quantum Wires of AlGaAs/GaAs
title_sort laser processing for nanoscale size quantum wires of algaas gaas
topic quantum wire
confinement factor
optical gain
url https://juaps.uoanbar.edu.iq/article_84996_234f5bbc22e77af35babd3a9cd6a4942.pdf
work_keys_str_mv AT ahlamhjaffer laserprocessingfornanoscalesizequantumwiresofalgaasgaas
AT ebtisammtsalman laserprocessingfornanoscalesizequantumwiresofalgaasgaas
AT mohammedhamadjassam laserprocessingfornanoscalesizequantumwiresofalgaasgaas