Optimized photoelectric conversion properties of PbS x Se1−x -QD/MoS2-NT 0D–1D mixed-dimensional van der Waals heterostructures

Zero-dimensional (0D)–one-dimensional (1D) mixed-dimensional van der Waals (MvdW) heterostructures have shown great potential in electronic/optoelectronic applications. However, addressing the interface barrier modulation and charge-transfer mechanisms remain challenging. Here, we develop an analyti...

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Main Authors: Biao Cai, Yipeng Zhao, Degao Xu, Gang Ouyang
Format: Article
Language:English
Published: IOP Publishing 2022-01-01
Series:New Journal of Physics
Subjects:
Online Access:https://doi.org/10.1088/1367-2630/ac74d9
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author Biao Cai
Yipeng Zhao
Degao Xu
Gang Ouyang
author_facet Biao Cai
Yipeng Zhao
Degao Xu
Gang Ouyang
author_sort Biao Cai
collection DOAJ
description Zero-dimensional (0D)–one-dimensional (1D) mixed-dimensional van der Waals (MvdW) heterostructures have shown great potential in electronic/optoelectronic applications. However, addressing the interface barrier modulation and charge-transfer mechanisms remain challenging. Here, we develop an analytic model to illustrate the open-circuit voltage and charge-transfer state energy in PbS _x Se _1− _x -quantum dots (QDs)/MoS _2 -nanotube (NT) 0D–1D MvdW heterostructures based on atomic-bond-relaxation approach, Marcus theory and modified-detailed balance principle. We find that the band alignment of PbS _x Se _1− _x -QDs/MoS _2 -NT heterostructures undergoes a transition from type II to type I, and the threshold of size is around 5.6 nm for x = 1, which makes the system suitable for various devices including photocatalytic device, light-emission device and solar cell under different sizes. Our results not only clarify the underlying mechanism of interfacial charge-transfer in the heterostructures, but also provide unique insight and new strategy for designing multifunctional and high-performance 0D–1D MvdW heterostructure devices.
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spelling doaj.art-30236fe2e57248f69bd4ef8db06e81b42023-08-09T14:24:37ZengIOP PublishingNew Journal of Physics1367-26302022-01-0124606301210.1088/1367-2630/ac74d9Optimized photoelectric conversion properties of PbS x Se1−x -QD/MoS2-NT 0D–1D mixed-dimensional van der Waals heterostructuresBiao Cai0Yipeng Zhao1Degao Xu2Gang Ouyang3https://orcid.org/0000-0003-2589-9641Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University , Changsha 410081, People’s Republic of ChinaCollege of Physics and Electronics Engineering, Hengyang Normal University , Hengyang 421008, People’s Republic of ChinaKey Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University , Changsha 410081, People’s Republic of ChinaKey Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University , Changsha 410081, People’s Republic of ChinaZero-dimensional (0D)–one-dimensional (1D) mixed-dimensional van der Waals (MvdW) heterostructures have shown great potential in electronic/optoelectronic applications. However, addressing the interface barrier modulation and charge-transfer mechanisms remain challenging. Here, we develop an analytic model to illustrate the open-circuit voltage and charge-transfer state energy in PbS _x Se _1− _x -quantum dots (QDs)/MoS _2 -nanotube (NT) 0D–1D MvdW heterostructures based on atomic-bond-relaxation approach, Marcus theory and modified-detailed balance principle. We find that the band alignment of PbS _x Se _1− _x -QDs/MoS _2 -NT heterostructures undergoes a transition from type II to type I, and the threshold of size is around 5.6 nm for x = 1, which makes the system suitable for various devices including photocatalytic device, light-emission device and solar cell under different sizes. Our results not only clarify the underlying mechanism of interfacial charge-transfer in the heterostructures, but also provide unique insight and new strategy for designing multifunctional and high-performance 0D–1D MvdW heterostructure devices.https://doi.org/10.1088/1367-2630/ac74d9mixed-dimensional van der Waals heterostructuresband alignmentelectron transfer ratepower conversion efficiency
spellingShingle Biao Cai
Yipeng Zhao
Degao Xu
Gang Ouyang
Optimized photoelectric conversion properties of PbS x Se1−x -QD/MoS2-NT 0D–1D mixed-dimensional van der Waals heterostructures
New Journal of Physics
mixed-dimensional van der Waals heterostructures
band alignment
electron transfer rate
power conversion efficiency
title Optimized photoelectric conversion properties of PbS x Se1−x -QD/MoS2-NT 0D–1D mixed-dimensional van der Waals heterostructures
title_full Optimized photoelectric conversion properties of PbS x Se1−x -QD/MoS2-NT 0D–1D mixed-dimensional van der Waals heterostructures
title_fullStr Optimized photoelectric conversion properties of PbS x Se1−x -QD/MoS2-NT 0D–1D mixed-dimensional van der Waals heterostructures
title_full_unstemmed Optimized photoelectric conversion properties of PbS x Se1−x -QD/MoS2-NT 0D–1D mixed-dimensional van der Waals heterostructures
title_short Optimized photoelectric conversion properties of PbS x Se1−x -QD/MoS2-NT 0D–1D mixed-dimensional van der Waals heterostructures
title_sort optimized photoelectric conversion properties of pbs x se1 x qd mos2 nt 0d 1d mixed dimensional van der waals heterostructures
topic mixed-dimensional van der Waals heterostructures
band alignment
electron transfer rate
power conversion efficiency
url https://doi.org/10.1088/1367-2630/ac74d9
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AT degaoxu optimizedphotoelectricconversionpropertiesofpbsxse1xqdmos2nt0d1dmixeddimensionalvanderwaalsheterostructures
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