Diffusion of Sn donors in β-Ga2O3
Diffusion of the n-type dopant Sn in β-Ga2O3 is studied using secondary-ion mass spectrometry combined with hybrid functional calculations. The diffusion of Sn from a Sn-doped bulk substrate with surface orientation (001) into an epitaxial layer is observed after heat treatments in the temperature r...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2023-04-01
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Series: | APL Materials |
Online Access: | http://dx.doi.org/10.1063/5.0142671 |