Transformed Filaments by Oxygen Plasma Treatment and Improved Resistance State
The simple structure and operation method of resistive random-access memory (RRAM) has attracted attention as next-generation memory. However, as it is greatly influenced by the movement of oxygen atoms during switching, it is essential to minimize the damage and adjust the defects. Here, we fabrica...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-08-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/15/2716 |
| _version_ | 1827618342911868928 |
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| author | Jongmin Park Jungwhan Choi Daewon Chung Sungjun Kim |
| author_facet | Jongmin Park Jungwhan Choi Daewon Chung Sungjun Kim |
| author_sort | Jongmin Park |
| collection | DOAJ |
| description | The simple structure and operation method of resistive random-access memory (RRAM) has attracted attention as next-generation memory. However, as it is greatly influenced by the movement of oxygen atoms during switching, it is essential to minimize the damage and adjust the defects. Here, we fabricated an ITO/SnO<sub>X</sub>/TaN device and investigated the performance improvement with the treatment of O<sub>2</sub> plasma. Firstly, the change in the forming curve was noticeable, and the defect adjustment was carried out effectively. By comparing the I–V curves, it was confirmed that the resistance increased and the current was successfully suppressed, making it suitable for use as a low-power consumption device. Retention of more than 10<sup>4</sup> s at room temperature was measured, and an endurance of 200 cycles was performed. The filaments’ configuration was revealed through the depth profile of X-ray photoelectron spectroscopy (XPS) and modeled to be visually observed. The work with plasma treatment provides a variety of applications to the neuromorphic system that require a low-current level. |
| first_indexed | 2024-03-09T10:06:19Z |
| format | Article |
| id | doaj.art-3036cb7e51a240b7906a6ca81b135b3c |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T10:06:19Z |
| publishDate | 2022-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-3036cb7e51a240b7906a6ca81b135b3c2023-12-01T23:04:48ZengMDPI AGNanomaterials2079-49912022-08-011215271610.3390/nano12152716Transformed Filaments by Oxygen Plasma Treatment and Improved Resistance StateJongmin Park0Jungwhan Choi1Daewon Chung2Sungjun Kim3Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaThe simple structure and operation method of resistive random-access memory (RRAM) has attracted attention as next-generation memory. However, as it is greatly influenced by the movement of oxygen atoms during switching, it is essential to minimize the damage and adjust the defects. Here, we fabricated an ITO/SnO<sub>X</sub>/TaN device and investigated the performance improvement with the treatment of O<sub>2</sub> plasma. Firstly, the change in the forming curve was noticeable, and the defect adjustment was carried out effectively. By comparing the I–V curves, it was confirmed that the resistance increased and the current was successfully suppressed, making it suitable for use as a low-power consumption device. Retention of more than 10<sup>4</sup> s at room temperature was measured, and an endurance of 200 cycles was performed. The filaments’ configuration was revealed through the depth profile of X-ray photoelectron spectroscopy (XPS) and modeled to be visually observed. The work with plasma treatment provides a variety of applications to the neuromorphic system that require a low-current level.https://www.mdpi.com/2079-4991/12/15/2716RRAMoxygen plasma treatmentXPSconductive filamentslow power consumption |
| spellingShingle | Jongmin Park Jungwhan Choi Daewon Chung Sungjun Kim Transformed Filaments by Oxygen Plasma Treatment and Improved Resistance State Nanomaterials RRAM oxygen plasma treatment XPS conductive filaments low power consumption |
| title | Transformed Filaments by Oxygen Plasma Treatment and Improved Resistance State |
| title_full | Transformed Filaments by Oxygen Plasma Treatment and Improved Resistance State |
| title_fullStr | Transformed Filaments by Oxygen Plasma Treatment and Improved Resistance State |
| title_full_unstemmed | Transformed Filaments by Oxygen Plasma Treatment and Improved Resistance State |
| title_short | Transformed Filaments by Oxygen Plasma Treatment and Improved Resistance State |
| title_sort | transformed filaments by oxygen plasma treatment and improved resistance state |
| topic | RRAM oxygen plasma treatment XPS conductive filaments low power consumption |
| url | https://www.mdpi.com/2079-4991/12/15/2716 |
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