Transformed Filaments by Oxygen Plasma Treatment and Improved Resistance State
The simple structure and operation method of resistive random-access memory (RRAM) has attracted attention as next-generation memory. However, as it is greatly influenced by the movement of oxygen atoms during switching, it is essential to minimize the damage and adjust the defects. Here, we fabrica...
| Autors principals: | , , , |
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| Format: | Article |
| Idioma: | English |
| Publicat: |
MDPI AG
2022-08-01
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| Col·lecció: | Nanomaterials |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2079-4991/12/15/2716 |