The numerical investigations of SiGe/Si heterojunction electro-optic modulator in mid-infrared
We present the detailed numerical analysis and characterization of SiGe/Si heterojunction electro-optic modulator at 2 μm, 4.3 μm, and 5 μm wavelengths. We investigate the band, the refractive index, and the carrier injection efficiency of SiGe/Si heterojunction PIN electrical structure. Numerical i...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Frontiers Media S.A.
2022-11-01
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| Series: | Frontiers in Physics |
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| Online Access: | https://www.frontiersin.org/articles/10.3389/fphy.2022.1019113/full |
| _version_ | 1811330505598042112 |
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| author | Song Feng Xiangjian Hu Lulu Feng Di Wang Menglin Chen Yong Liu Heming Hu Lianxi Jia |
| author_facet | Song Feng Xiangjian Hu Lulu Feng Di Wang Menglin Chen Yong Liu Heming Hu Lianxi Jia |
| author_sort | Song Feng |
| collection | DOAJ |
| description | We present the detailed numerical analysis and characterization of SiGe/Si heterojunction electro-optic modulator at 2 μm, 4.3 μm, and 5 μm wavelengths. We investigate the band, the refractive index, and the carrier injection efficiency of SiGe/Si heterojunction PIN electrical structure. Numerical investigations are carried out on the key geometrical parameters, doping concentration, Ge content. The results show that the modulated voltage of SiGe/Si PIN heterojunction modulator is lower 50% than that of Si modulator under the same modulation effect. In order to eliminate the absorption losses of SiO2 in mid-infrared, the punch Mach–Zehnder optical structure is established and researched. The research present that the modulator has the short 500 µm phase shifters and the low VπLπ of 0.042 Vcm under forward bias voltage, and the extinction ratio is greater than 12.81 dB. The high-speed transmission characteristics are shown to have clean eye diagrams up to 40 Gbps in mid-infrared. |
| first_indexed | 2024-04-13T16:02:48Z |
| format | Article |
| id | doaj.art-3049fb8bf1cc4d67b964765c0a466850 |
| institution | Directory Open Access Journal |
| issn | 2296-424X |
| language | English |
| last_indexed | 2024-04-13T16:02:48Z |
| publishDate | 2022-11-01 |
| publisher | Frontiers Media S.A. |
| record_format | Article |
| series | Frontiers in Physics |
| spelling | doaj.art-3049fb8bf1cc4d67b964765c0a4668502022-12-22T02:40:28ZengFrontiers Media S.A.Frontiers in Physics2296-424X2022-11-011010.3389/fphy.2022.10191131019113The numerical investigations of SiGe/Si heterojunction electro-optic modulator in mid-infraredSong Feng0Xiangjian Hu1Lulu Feng2Di Wang3Menglin Chen4Yong Liu5Heming Hu6Lianxi Jia7School of Science, Xi’an Polytechnic University, Xi’an, ChinaSchool of Science, Xi’an Polytechnic University, Xi’an, ChinaSchool of Science, Xi’an Polytechnic University, Xi’an, ChinaSchool of Science, Xi’an Polytechnic University, Xi’an, ChinaSchool of Science, Xi’an Polytechnic University, Xi’an, ChinaSchool of Science, Xi’an Polytechnic University, Xi’an, ChinaSchool of Science, Kunming University of Science and Technology, Kunming, ChinaShanghai Industrial μTechnology Research Institute, Shanghai, ChinaWe present the detailed numerical analysis and characterization of SiGe/Si heterojunction electro-optic modulator at 2 μm, 4.3 μm, and 5 μm wavelengths. We investigate the band, the refractive index, and the carrier injection efficiency of SiGe/Si heterojunction PIN electrical structure. Numerical investigations are carried out on the key geometrical parameters, doping concentration, Ge content. The results show that the modulated voltage of SiGe/Si PIN heterojunction modulator is lower 50% than that of Si modulator under the same modulation effect. In order to eliminate the absorption losses of SiO2 in mid-infrared, the punch Mach–Zehnder optical structure is established and researched. The research present that the modulator has the short 500 µm phase shifters and the low VπLπ of 0.042 Vcm under forward bias voltage, and the extinction ratio is greater than 12.81 dB. The high-speed transmission characteristics are shown to have clean eye diagrams up to 40 Gbps in mid-infrared.https://www.frontiersin.org/articles/10.3389/fphy.2022.1019113/fullelectro-optic modulatorSiGe/Si heterojunctionmid-infraredmach-zehnder modulatorsilicon on insulator |
| spellingShingle | Song Feng Xiangjian Hu Lulu Feng Di Wang Menglin Chen Yong Liu Heming Hu Lianxi Jia The numerical investigations of SiGe/Si heterojunction electro-optic modulator in mid-infrared Frontiers in Physics electro-optic modulator SiGe/Si heterojunction mid-infrared mach-zehnder modulator silicon on insulator |
| title | The numerical investigations of SiGe/Si heterojunction electro-optic modulator in mid-infrared |
| title_full | The numerical investigations of SiGe/Si heterojunction electro-optic modulator in mid-infrared |
| title_fullStr | The numerical investigations of SiGe/Si heterojunction electro-optic modulator in mid-infrared |
| title_full_unstemmed | The numerical investigations of SiGe/Si heterojunction electro-optic modulator in mid-infrared |
| title_short | The numerical investigations of SiGe/Si heterojunction electro-optic modulator in mid-infrared |
| title_sort | numerical investigations of sige si heterojunction electro optic modulator in mid infrared |
| topic | electro-optic modulator SiGe/Si heterojunction mid-infrared mach-zehnder modulator silicon on insulator |
| url | https://www.frontiersin.org/articles/10.3389/fphy.2022.1019113/full |
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