Development of Efficient High Power Amplifier With More Than an Octave Bandwidth
This paper presents a design of a GaN HEMT-based power amplifier (PA), with enhanced efficiency and linearity over the operation band from 0.5 to 1.5 GHz. The design is based on wideband load-pull and source-pull analysis. A novel procedure is developed to optimize the impedance values and synthesiz...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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IEEE
2018-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/8246504/ |
| _version_ | 1818853718525739008 |
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| author | Waqar Ahmad Malik Abdelfattah Ahmad Sheta Ibrahim Elshafiey |
| author_facet | Waqar Ahmad Malik Abdelfattah Ahmad Sheta Ibrahim Elshafiey |
| author_sort | Waqar Ahmad Malik |
| collection | DOAJ |
| description | This paper presents a design of a GaN HEMT-based power amplifier (PA), with enhanced efficiency and linearity over the operation band from 0.5 to 1.5 GHz. The design is based on wideband load-pull and source-pull analysis. A novel procedure is developed to optimize the impedance values and synthesize the matching networks. The amplifier achieves drain efficiency of 40%-68% and power added efficiency (PAE) of 35.7%-63.8%, over the entire frequency band measured for an input power of 24 dBm. To ensure flat gain response, a high pass filter is deployed at the input of the PA, thus achieving a gain of 13.8 ±1 dB for the entire band. Wideband matching circuits are realized on Taconic RF35 with dielectric constant of 3.5 and thickness of 0.76 mm. The PA is found to maintain output power of 36.8-38.3 dBm across the frequency band. Carrier to intermodulation distortion ratio for two-tone input signal with 24-dBm power per-tone and a spacing of 5 MHz is found to be better than 30 dB. In addition, the PA is tested for frequency spacing values of 20 and 25 MHz and good linearity levels are attained. The developed PA thus provides attractive features related to efficiency, linearity, and extended bandwidth, which make this amplifier appropriate for implementations in various wireless communications systems. |
| first_indexed | 2024-12-19T07:41:16Z |
| format | Article |
| id | doaj.art-305fed0df8ad4b029d6856b9fb5bae90 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-19T07:41:16Z |
| publishDate | 2018-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-305fed0df8ad4b029d6856b9fb5bae902022-12-21T20:30:26ZengIEEEIEEE Access2169-35362018-01-0166602660910.1109/ACCESS.2017.27892168246504Development of Efficient High Power Amplifier With More Than an Octave BandwidthWaqar Ahmad Malik0https://orcid.org/0000-0001-7996-4635Abdelfattah Ahmad Sheta1Ibrahim Elshafiey2Department of Electrical Engineering, King Saud University, Riyadh, Saudi ArabiaDepartment of Electrical Engineering, King Saud University, Riyadh, Saudi ArabiaDepartment of Electrical Engineering, King Saud University, Riyadh, Saudi ArabiaThis paper presents a design of a GaN HEMT-based power amplifier (PA), with enhanced efficiency and linearity over the operation band from 0.5 to 1.5 GHz. The design is based on wideband load-pull and source-pull analysis. A novel procedure is developed to optimize the impedance values and synthesize the matching networks. The amplifier achieves drain efficiency of 40%-68% and power added efficiency (PAE) of 35.7%-63.8%, over the entire frequency band measured for an input power of 24 dBm. To ensure flat gain response, a high pass filter is deployed at the input of the PA, thus achieving a gain of 13.8 ±1 dB for the entire band. Wideband matching circuits are realized on Taconic RF35 with dielectric constant of 3.5 and thickness of 0.76 mm. The PA is found to maintain output power of 36.8-38.3 dBm across the frequency band. Carrier to intermodulation distortion ratio for two-tone input signal with 24-dBm power per-tone and a spacing of 5 MHz is found to be better than 30 dB. In addition, the PA is tested for frequency spacing values of 20 and 25 MHz and good linearity levels are attained. The developed PA thus provides attractive features related to efficiency, linearity, and extended bandwidth, which make this amplifier appropriate for implementations in various wireless communications systems.https://ieeexplore.ieee.org/document/8246504/GaN HEMThigh efficiencypower added efficiency (PAE)wideband high power amplifier |
| spellingShingle | Waqar Ahmad Malik Abdelfattah Ahmad Sheta Ibrahim Elshafiey Development of Efficient High Power Amplifier With More Than an Octave Bandwidth IEEE Access GaN HEMT high efficiency power added efficiency (PAE) wideband high power amplifier |
| title | Development of Efficient High Power Amplifier With More Than an Octave Bandwidth |
| title_full | Development of Efficient High Power Amplifier With More Than an Octave Bandwidth |
| title_fullStr | Development of Efficient High Power Amplifier With More Than an Octave Bandwidth |
| title_full_unstemmed | Development of Efficient High Power Amplifier With More Than an Octave Bandwidth |
| title_short | Development of Efficient High Power Amplifier With More Than an Octave Bandwidth |
| title_sort | development of efficient high power amplifier with more than an octave bandwidth |
| topic | GaN HEMT high efficiency power added efficiency (PAE) wideband high power amplifier |
| url | https://ieeexplore.ieee.org/document/8246504/ |
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