Development of Efficient High Power Amplifier With More Than an Octave Bandwidth

Development of Efficient High Power Amplifier With More Than an Octave Bandwidth

This paper presents a design of a GaN HEMT-based power amplifier (PA), with enhanced efficiency and linearity over the operation band from 0.5 to 1.5 GHz. The design is based on wideband load-pull and source-pull analysis. A novel procedure is developed to optimize the impedance values and synthesiz...

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Bibliographic Details
Main Authors: Waqar Ahmad Malik, Abdelfattah Ahmad Sheta, Ibrahim Elshafiey
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Access
Subjects:
GaN HEMT
high efficiency
power added efficiency (PAE)
wideband high power amplifier
Online Access:https://ieeexplore.ieee.org/document/8246504/

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