Problems with Evaluation of Micro-Pore Size in Silicon Carbide Using Synchrotron X-ray Phase Contrast Imaging
We report near- and far-field computer simulations of synchrotron X-ray phase-contrast images using a micropipe in a SiC crystal as a model system. Experimental images illustrate the theoretical results. The properties of nearly perfect single crystals of silicon carbide are strongly affected by μm-...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-01-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/15/3/856 |
| Summary: | We report near- and far-field computer simulations of synchrotron X-ray phase-contrast images using a micropipe in a SiC crystal as a model system. Experimental images illustrate the theoretical results. The properties of nearly perfect single crystals of silicon carbide are strongly affected by μm-sized pores even if their distribution in a crystal bulk is sparse. A non-destructive technique to reveal the pores is in-line phase-contrast imaging with synchrotron radiation. A quantitative approach to evaluating pore sizes is the use of computer simulations of phase-contrast images. It was found that near-field phase-contrast images are formed at very short distances behind a sample. We estimated these distances for tiny pores. The Fresnel zones did not provide any information on the pore size in the far-field, but a contrast value within the first Fresnel zone could be used for simulations. Finally, general problems in evaluating a micro-pore size via image analysis are discussed. |
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| ISSN: | 1996-1944 |