Electronic properties of diamond semiconductor materials: based on response surface model
Diamond, a wide bandgap semiconductor material, has excellent physicochemical properties. It has great potential for application in high temperature, high frequency, high power electronic devices and other high technology fields. In order to study the electronic properties of diamond more precisely,...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Sciendo
2024-01-01
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| Series: | Applied Mathematics and Nonlinear Sciences |
| Subjects: | |
| Online Access: | https://doi.org/10.2478/amns.2023.1.00064 |
| _version_ | 1797340930574909440 |
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| author | Bi Sheng Ye Xiaoying Shao Yang |
| author_facet | Bi Sheng Ye Xiaoying Shao Yang |
| author_sort | Bi Sheng |
| collection | DOAJ |
| description | Diamond, a wide bandgap semiconductor material, has excellent physicochemical properties. It has great potential for application in high temperature, high frequency, high power electronic devices and other high technology fields. In order to study the electronic properties of diamond more precisely, an AM-response surface model is developed in this paper to investigate the electronic structures of diamond, P-doped diamond and N-doped diamond surfaces in depth. It is shown that there are three forms of charge states in the single vacancy on the diamond surface. When E=0 V, the negative charge energy level is -0.5 mV, the positive charge is 1 mV, and the zero level remains 0. And its energy level is unstable. In contrast, the double vacancy charge on the diamond surface varies depending on the valence band taken by E, and only one charge state exists. When E<0, the diamond surface vacant electron nature is negative charge state. When E>0, it is positive charge energy level. The electronic properties of the P-doped diamond semiconductor material are calculated to have a constant positive charge (1 mV). The electronic property of N-doped diamond semiconductor material is constant negative charge (-1mV). |
| first_indexed | 2024-03-08T10:10:33Z |
| format | Article |
| id | doaj.art-30905c6759d84b348ee3849380b68f09 |
| institution | Directory Open Access Journal |
| issn | 2444-8656 |
| language | English |
| last_indexed | 2024-03-08T10:10:33Z |
| publishDate | 2024-01-01 |
| publisher | Sciendo |
| record_format | Article |
| series | Applied Mathematics and Nonlinear Sciences |
| spelling | doaj.art-30905c6759d84b348ee3849380b68f092024-01-29T08:52:25ZengSciendoApplied Mathematics and Nonlinear Sciences2444-86562024-01-019110.2478/amns.2023.1.00064Electronic properties of diamond semiconductor materials: based on response surface modelBi Sheng0Ye Xiaoying1Shao Yang21Tangshan Polytechnic College, Tangshan063299, China1Tangshan Polytechnic College, Tangshan063299, China1Tangshan Polytechnic College, Tangshan063299, ChinaDiamond, a wide bandgap semiconductor material, has excellent physicochemical properties. It has great potential for application in high temperature, high frequency, high power electronic devices and other high technology fields. In order to study the electronic properties of diamond more precisely, an AM-response surface model is developed in this paper to investigate the electronic structures of diamond, P-doped diamond and N-doped diamond surfaces in depth. It is shown that there are three forms of charge states in the single vacancy on the diamond surface. When E=0 V, the negative charge energy level is -0.5 mV, the positive charge is 1 mV, and the zero level remains 0. And its energy level is unstable. In contrast, the double vacancy charge on the diamond surface varies depending on the valence band taken by E, and only one charge state exists. When E<0, the diamond surface vacant electron nature is negative charge state. When E>0, it is positive charge energy level. The electronic properties of the P-doped diamond semiconductor material are calculated to have a constant positive charge (1 mV). The electronic property of N-doped diamond semiconductor material is constant negative charge (-1mV).https://doi.org/10.2478/amns.2023.1.00064diamondsemiconductor materialsam algorithmresponse surface modelelectronic properties81s30 |
| spellingShingle | Bi Sheng Ye Xiaoying Shao Yang Electronic properties of diamond semiconductor materials: based on response surface model Applied Mathematics and Nonlinear Sciences diamond semiconductor materials am algorithm response surface model electronic properties 81s30 |
| title | Electronic properties of diamond semiconductor materials: based on response surface model |
| title_full | Electronic properties of diamond semiconductor materials: based on response surface model |
| title_fullStr | Electronic properties of diamond semiconductor materials: based on response surface model |
| title_full_unstemmed | Electronic properties of diamond semiconductor materials: based on response surface model |
| title_short | Electronic properties of diamond semiconductor materials: based on response surface model |
| title_sort | electronic properties of diamond semiconductor materials based on response surface model |
| topic | diamond semiconductor materials am algorithm response surface model electronic properties 81s30 |
| url | https://doi.org/10.2478/amns.2023.1.00064 |
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