Structural and optical properties for nano GaxSb1-x films
Alloys of GaxSb1-x system with different Ga concentration (x=0.4, 0.5, 0.6) have been prepared in evacuated quartz tubes. The structure of the alloys were examined by X-ray diffraction analysis (XRD) and found to be polycrystalline of zincblend structure with strong crystalline orientation (220). T...
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| Format: | Article |
| Language: | English |
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University of Baghdad
2012-10-01
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| Series: | Iraqi Journal of Physics |
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| Online Access: | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/742 |
| _version_ | 1797871284554563584 |
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| author | M F.A. Alias |
| author_facet | M F.A. Alias |
| author_sort | M F.A. Alias |
| collection | DOAJ |
| description |
Alloys of GaxSb1-x system with different Ga concentration (x=0.4, 0.5, 0.6) have been prepared in evacuated quartz tubes. The structure of the alloys were examined by X-ray diffraction analysis (XRD) and found to be polycrystalline of zincblend structure with strong crystalline orientation (220). Thin films of GaxSb1-x system of about 1.0 μm thickness have been deposited by flash evaporation method on glass substrate at 473K substrate temperature (Ts) and under pressure 10-6 mbar. This study concentrated on the effect of Ga concentration (x) on some physical properties of GaxSb1-x thin films such as structural and optical properties. The structure of prepared films for various values of x was polycrystalline. The X-ray diffraction analysis (XRD) for GaxSb1-x showed that the preferential orientation was (111) for all values of Ga concentration. The grain size was varied with Ga concentration. The optical analysis is performed with the FT-IR spectrophotometer. The optical measurement showed that GaxSb1-x thin films has direct energy gap .It is found that the optical energy gap increased when x increased with the range (x=0.4, 0.5 and 0.6). The optical constant for GaxSb1-x films was varied with increasing x. These prepared polycrystalline GaxSb1-x thin film was a good candidate for use as a base layer material in thermo photovoltaic (TPV).
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| first_indexed | 2024-04-10T00:41:32Z |
| format | Article |
| id | doaj.art-30c1b15c8af041199ade3a6e565a0d8e |
| institution | Directory Open Access Journal |
| issn | 2070-4003 2664-5548 |
| language | English |
| last_indexed | 2024-04-10T00:41:32Z |
| publishDate | 2012-10-01 |
| publisher | University of Baghdad |
| record_format | Article |
| series | Iraqi Journal of Physics |
| spelling | doaj.art-30c1b15c8af041199ade3a6e565a0d8e2023-03-14T05:45:02ZengUniversity of BaghdadIraqi Journal of Physics2070-40032664-55482012-10-011018Structural and optical properties for nano GaxSb1-x filmsM F.A. Alias0Department of Medical Physics, College of Medical, University of Kerbela Alloys of GaxSb1-x system with different Ga concentration (x=0.4, 0.5, 0.6) have been prepared in evacuated quartz tubes. The structure of the alloys were examined by X-ray diffraction analysis (XRD) and found to be polycrystalline of zincblend structure with strong crystalline orientation (220). Thin films of GaxSb1-x system of about 1.0 μm thickness have been deposited by flash evaporation method on glass substrate at 473K substrate temperature (Ts) and under pressure 10-6 mbar. This study concentrated on the effect of Ga concentration (x) on some physical properties of GaxSb1-x thin films such as structural and optical properties. The structure of prepared films for various values of x was polycrystalline. The X-ray diffraction analysis (XRD) for GaxSb1-x showed that the preferential orientation was (111) for all values of Ga concentration. The grain size was varied with Ga concentration. The optical analysis is performed with the FT-IR spectrophotometer. The optical measurement showed that GaxSb1-x thin films has direct energy gap .It is found that the optical energy gap increased when x increased with the range (x=0.4, 0.5 and 0.6). The optical constant for GaxSb1-x films was varied with increasing x. These prepared polycrystalline GaxSb1-x thin film was a good candidate for use as a base layer material in thermo photovoltaic (TPV). https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/742GaxSb1-x alloys and thin films, flash-evaporation, structural and optical properties. |
| spellingShingle | M F.A. Alias Structural and optical properties for nano GaxSb1-x films Iraqi Journal of Physics GaxSb1-x alloys and thin films, flash-evaporation, structural and optical properties. |
| title | Structural and optical properties for nano GaxSb1-x films |
| title_full | Structural and optical properties for nano GaxSb1-x films |
| title_fullStr | Structural and optical properties for nano GaxSb1-x films |
| title_full_unstemmed | Structural and optical properties for nano GaxSb1-x films |
| title_short | Structural and optical properties for nano GaxSb1-x films |
| title_sort | structural and optical properties for nano gaxsb1 x films |
| topic | GaxSb1-x alloys and thin films, flash-evaporation, structural and optical properties. |
| url | https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/742 |
| work_keys_str_mv | AT mfaalias structuralandopticalpropertiesfornanogaxsb1xfilms |