High-Performance Charge Pump Regulator with Integrated CMOS Voltage Sensing Control Circuit

This paper introduces a design for a charge pump DC-DC boost regulator with an integrated low-voltage control circuit. With a charge pump and feedback circuits implemented in 0.35 µm CMOS technology, the proposed DC-DC boost regulator offers an efficient device solution for low-power applications. T...

Full description

Bibliographic Details
Main Authors: Chan-Soo Lee, Ayodeji Matthew Monebi, Dansran Bayarsaikhan, Songyuan Xu, Bierng-Chearl Ahn, In-Sung Lee
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Energies
Subjects:
Online Access:https://www.mdpi.com/1996-1073/16/12/4577
_version_ 1797595087571517440
author Chan-Soo Lee
Ayodeji Matthew Monebi
Dansran Bayarsaikhan
Songyuan Xu
Bierng-Chearl Ahn
In-Sung Lee
author_facet Chan-Soo Lee
Ayodeji Matthew Monebi
Dansran Bayarsaikhan
Songyuan Xu
Bierng-Chearl Ahn
In-Sung Lee
author_sort Chan-Soo Lee
collection DOAJ
description This paper introduces a design for a charge pump DC-DC boost regulator with an integrated low-voltage control circuit. With a charge pump and feedback circuits implemented in 0.35 µm CMOS technology, the proposed DC-DC boost regulator offers an efficient device solution for low-power applications. The proposed design employs an error amplifier, oscillator, and comparator in the control circuit which is designed with a supply voltage of 1.8–3.5 V and 2 MHz frequency. Stability is obtained via a pole-zero compensation in the feedback circuit. The charge pump regulator with four pump stages and the whole regulator circuit are analyzed using the Cadence simulation tool. Measurements of the fabricated 0.35 µm CMOS regulator show that the transient time of the error amplifier is controlled within 1.0 µsec and the output voltage is accurately controlled from 7.8 V to 9.4 V with 27–38 mV ripple and 4.5 mA maximum current.
first_indexed 2024-03-11T02:31:29Z
format Article
id doaj.art-30c23dc46b4a4e42a9af78ab1f0e9d30
institution Directory Open Access Journal
issn 1996-1073
language English
last_indexed 2024-03-11T02:31:29Z
publishDate 2023-06-01
publisher MDPI AG
record_format Article
series Energies
spelling doaj.art-30c23dc46b4a4e42a9af78ab1f0e9d302023-11-18T10:11:16ZengMDPI AGEnergies1996-10732023-06-011612457710.3390/en16124577High-Performance Charge Pump Regulator with Integrated CMOS Voltage Sensing Control CircuitChan-Soo Lee0Ayodeji Matthew Monebi1Dansran Bayarsaikhan2Songyuan Xu3Bierng-Chearl Ahn4In-Sung Lee5School of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, Republic of KoreaSchool of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, Republic of KoreaSchool of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, Republic of KoreaSchool of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, Republic of KoreaSchool of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, Republic of KoreaSchool of Electrical and Computer Engineering, Chungbuk National University, Cheongju 28644, Republic of KoreaThis paper introduces a design for a charge pump DC-DC boost regulator with an integrated low-voltage control circuit. With a charge pump and feedback circuits implemented in 0.35 µm CMOS technology, the proposed DC-DC boost regulator offers an efficient device solution for low-power applications. The proposed design employs an error amplifier, oscillator, and comparator in the control circuit which is designed with a supply voltage of 1.8–3.5 V and 2 MHz frequency. Stability is obtained via a pole-zero compensation in the feedback circuit. The charge pump regulator with four pump stages and the whole regulator circuit are analyzed using the Cadence simulation tool. Measurements of the fabricated 0.35 µm CMOS regulator show that the transient time of the error amplifier is controlled within 1.0 µsec and the output voltage is accurately controlled from 7.8 V to 9.4 V with 27–38 mV ripple and 4.5 mA maximum current.https://www.mdpi.com/1996-1073/16/12/4577charge pumpCMOSintegrationvoltage control circuit
spellingShingle Chan-Soo Lee
Ayodeji Matthew Monebi
Dansran Bayarsaikhan
Songyuan Xu
Bierng-Chearl Ahn
In-Sung Lee
High-Performance Charge Pump Regulator with Integrated CMOS Voltage Sensing Control Circuit
Energies
charge pump
CMOS
integration
voltage control circuit
title High-Performance Charge Pump Regulator with Integrated CMOS Voltage Sensing Control Circuit
title_full High-Performance Charge Pump Regulator with Integrated CMOS Voltage Sensing Control Circuit
title_fullStr High-Performance Charge Pump Regulator with Integrated CMOS Voltage Sensing Control Circuit
title_full_unstemmed High-Performance Charge Pump Regulator with Integrated CMOS Voltage Sensing Control Circuit
title_short High-Performance Charge Pump Regulator with Integrated CMOS Voltage Sensing Control Circuit
title_sort high performance charge pump regulator with integrated cmos voltage sensing control circuit
topic charge pump
CMOS
integration
voltage control circuit
url https://www.mdpi.com/1996-1073/16/12/4577
work_keys_str_mv AT chansoolee highperformancechargepumpregulatorwithintegratedcmosvoltagesensingcontrolcircuit
AT ayodejimatthewmonebi highperformancechargepumpregulatorwithintegratedcmosvoltagesensingcontrolcircuit
AT dansranbayarsaikhan highperformancechargepumpregulatorwithintegratedcmosvoltagesensingcontrolcircuit
AT songyuanxu highperformancechargepumpregulatorwithintegratedcmosvoltagesensingcontrolcircuit
AT bierngchearlahn highperformancechargepumpregulatorwithintegratedcmosvoltagesensingcontrolcircuit
AT insunglee highperformancechargepumpregulatorwithintegratedcmosvoltagesensingcontrolcircuit