The Role of GaN in the Heterostructure WS<sub>2</sub>/GaN for SERS Applications

The Role of GaN in the Heterostructure WS<sub>2</sub>/GaN for SERS Applications

In the application of WS<sub>2</sub> as a surface–enhanced Raman scattering (SERS) substrate, enhancing the charge transfer (CT) opportunity between WS<sub>2</sub> and analyte is an important issue for SERS efficiency. In this study, we deposited few-layer WS<sub>2</...

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Bibliographic Details
Main Authors: Tsung-Shine Ko, En-Ting Lin, Yen-Teng Ho, Chen-An Deng
Format: Article
Language:English
Published: MDPI AG 2023-04-01
Series:Materials
Subjects:
SERS
WS<sub>2</sub>
GaN
heterostructure
charge transfer
Online Access:https://www.mdpi.com/1996-1944/16/8/3054

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