Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions
Abstract Oxide semiconductor transistors control the brightness and color of organic light‐emitting diode (OLED) displays in large‐screen televisions to portable telecommunications devices. Oxide semiconductor thin‐film transistors under driving conditions are required to maintain a steady current t...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-03-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202201109 |
| _version_ | 1827893238935060480 |
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| author | Jingyu Park Sungju Choi Changwook Kim Hong Jae Shin Yun Sik Jeong Jong Uk Bae Chang Ho Oh Saeroonter Oh Dae Hwan Kim |
| author_facet | Jingyu Park Sungju Choi Changwook Kim Hong Jae Shin Yun Sik Jeong Jong Uk Bae Chang Ho Oh Saeroonter Oh Dae Hwan Kim |
| author_sort | Jingyu Park |
| collection | DOAJ |
| description | Abstract Oxide semiconductor transistors control the brightness and color of organic light‐emitting diode (OLED) displays in large‐screen televisions to portable telecommunications devices. Oxide semiconductor thin‐film transistors under driving conditions are required to maintain a steady current through the OLED for constant illuminance. Interestingly, for driving conditions under strong saturation where both gate and drain bias are high, a boosting phenomenon of the drain current is discovered, even with compensation of the threshold voltage. In this paper, the current boosting effect of self‐aligned InGaZnO transistors under driving conditions is comprehensively investigated. Based on experimental extraction methods, two distinct regions within the device are identified: an electron‐capture‐dominant region including electron trapping in the gate insulator and O–O dimer bond‐breaking, and an electron‐emission‐dominant region caused by peroxide formation. A dual‐transistor‐in‐series model is proposed, where each region is modeled as a local transistor. The current boosting phenomena as a function of time are well‐reproduced for various channel length devices, which validate the accuracy of the model. Better understanding of the underlying mechanisms enables increased effectiveness of compensation schemes for transistors under long‐term current‐driving conditions. |
| first_indexed | 2024-03-12T21:51:57Z |
| format | Article |
| id | doaj.art-30fa34988ed240b281ac3543a2c7655a |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-12T21:51:57Z |
| publishDate | 2023-03-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-30fa34988ed240b281ac3543a2c7655a2023-07-26T01:36:08ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-03-0193n/an/a10.1002/aelm.202201109Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving ConditionsJingyu Park0Sungju Choi1Changwook Kim2Hong Jae Shin3Yun Sik Jeong4Jong Uk Bae5Chang Ho Oh6Saeroonter Oh7Dae Hwan Kim8School of Electrical Engineering Kookmin University Seoul 02707 Republic of KoreaSchool of Electrical Engineering Kookmin University Seoul 02707 Republic of KoreaSchool of Electrical Engineering Kookmin University Seoul 02707 Republic of KoreaLarge Display Business Unit LG Display Company Paju 10845 Republic of KoreaLarge Display Business Unit LG Display Company Paju 10845 Republic of KoreaLarge Display Business Unit LG Display Company Paju 10845 Republic of KoreaLarge Display Business Unit LG Display Company Paju 10845 Republic of KoreaDepartment of Electrical and Electronic Engineering Hanyang University Ansan 15588 Republic of KoreaSchool of Electrical Engineering Kookmin University Seoul 02707 Republic of KoreaAbstract Oxide semiconductor transistors control the brightness and color of organic light‐emitting diode (OLED) displays in large‐screen televisions to portable telecommunications devices. Oxide semiconductor thin‐film transistors under driving conditions are required to maintain a steady current through the OLED for constant illuminance. Interestingly, for driving conditions under strong saturation where both gate and drain bias are high, a boosting phenomenon of the drain current is discovered, even with compensation of the threshold voltage. In this paper, the current boosting effect of self‐aligned InGaZnO transistors under driving conditions is comprehensively investigated. Based on experimental extraction methods, two distinct regions within the device are identified: an electron‐capture‐dominant region including electron trapping in the gate insulator and O–O dimer bond‐breaking, and an electron‐emission‐dominant region caused by peroxide formation. A dual‐transistor‐in‐series model is proposed, where each region is modeled as a local transistor. The current boosting phenomena as a function of time are well‐reproduced for various channel length devices, which validate the accuracy of the model. Better understanding of the underlying mechanisms enables increased effectiveness of compensation schemes for transistors under long‐term current‐driving conditions.https://doi.org/10.1002/aelm.202201109amorphous InGaZnOcurrent boostingdriveroxide semiconductorsself‐alignedthin‐film transistors |
| spellingShingle | Jingyu Park Sungju Choi Changwook Kim Hong Jae Shin Yun Sik Jeong Jong Uk Bae Chang Ho Oh Saeroonter Oh Dae Hwan Kim Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions Advanced Electronic Materials amorphous InGaZnO current boosting driver oxide semiconductors self‐aligned thin‐film transistors |
| title | Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions |
| title_full | Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions |
| title_fullStr | Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions |
| title_full_unstemmed | Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions |
| title_short | Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions |
| title_sort | current boosting of self aligned top gate amorphous ingazno thin film transistors under driving conditions |
| topic | amorphous InGaZnO current boosting driver oxide semiconductors self‐aligned thin‐film transistors |
| url | https://doi.org/10.1002/aelm.202201109 |
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