ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)
In this paper, an overview of the influence of various modifications on ZnO-based RRAM has been conducted. Firstly, the motivation for creating new memory technology is presented. The resistive switching mechanism is explained, including its response to the selection of active layers and electrodes....
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-02-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/13/3/416 |
| _version_ | 1827750362236321792 |
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| author | Ewelina Nowak Edyta Chłopocka Mirosław Szybowicz |
| author_facet | Ewelina Nowak Edyta Chłopocka Mirosław Szybowicz |
| author_sort | Ewelina Nowak |
| collection | DOAJ |
| description | In this paper, an overview of the influence of various modifications on ZnO-based RRAM has been conducted. Firstly, the motivation for creating new memory technology is presented. The resistive switching mechanism is explained, including its response to the selection of active layers and electrodes. A comparison of ZnO devices assembled via different deposition methods is made. Additional treatment of the active layer and electrodes improving the performance are reported. This work gives an overview of the influence of different dopants on the characteristics of the device. The manuscript overviews the previous investigation of inclusion of inserting layers and nanostructures into ZnO-based RRAM. |
| first_indexed | 2024-03-11T06:42:33Z |
| format | Article |
| id | doaj.art-318ec752ee404f8fbea3a311f056a59c |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-11T06:42:33Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-318ec752ee404f8fbea3a311f056a59c2023-11-17T10:28:28ZengMDPI AGCrystals2073-43522023-02-0113341610.3390/cryst13030416ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)Ewelina Nowak0Edyta Chłopocka1Mirosław Szybowicz2Insitute of Materials Research and Quantum Engineering, Poznań University of Technology, 61-139 Poznań, PolandInsitute of Materials Research and Quantum Engineering, Poznań University of Technology, 61-139 Poznań, PolandInsitute of Materials Research and Quantum Engineering, Poznań University of Technology, 61-139 Poznań, PolandIn this paper, an overview of the influence of various modifications on ZnO-based RRAM has been conducted. Firstly, the motivation for creating new memory technology is presented. The resistive switching mechanism is explained, including its response to the selection of active layers and electrodes. A comparison of ZnO devices assembled via different deposition methods is made. Additional treatment of the active layer and electrodes improving the performance are reported. This work gives an overview of the influence of different dopants on the characteristics of the device. The manuscript overviews the previous investigation of inclusion of inserting layers and nanostructures into ZnO-based RRAM.https://www.mdpi.com/2073-4352/13/3/416ZnOMoS<sub>2</sub>graphenedopingmemristorresistive switching |
| spellingShingle | Ewelina Nowak Edyta Chłopocka Mirosław Szybowicz ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM) Crystals ZnO MoS<sub>2</sub> graphene doping memristor resistive switching |
| title | ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM) |
| title_full | ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM) |
| title_fullStr | ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM) |
| title_full_unstemmed | ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM) |
| title_short | ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM) |
| title_sort | zno and zno based materials as active layer in resistive random access memory rram |
| topic | ZnO MoS<sub>2</sub> graphene doping memristor resistive switching |
| url | https://www.mdpi.com/2073-4352/13/3/416 |
| work_keys_str_mv | AT ewelinanowak znoandznobasedmaterialsasactivelayerinresistiverandomaccessmemoryrram AT edytachłopocka znoandznobasedmaterialsasactivelayerinresistiverandomaccessmemoryrram AT mirosławszybowicz znoandznobasedmaterialsasactivelayerinresistiverandomaccessmemoryrram |