Antenna coupled graphene-FET as ultra-sensitive room temperature broadband THz detector
A high sensitivity, low power (∼1μW to 10 μW), room temperature, antenna coupled, THz (0.8 THz) detector is presented by means field effect transistor (FETs) fabricated on epitaxial-grown graphene on silicon carbide. The contact resistance across the source and drain are made high to study the effec...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2018-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5063399 |
| _version_ | 1811292465206919168 |
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| author | Rama Murali G K Prathmesh Deshmukh S. S. Prabhu Palash Kumar Basu |
| author_facet | Rama Murali G K Prathmesh Deshmukh S. S. Prabhu Palash Kumar Basu |
| author_sort | Rama Murali G K |
| collection | DOAJ |
| description | A high sensitivity, low power (∼1μW to 10 μW), room temperature, antenna coupled, THz (0.8 THz) detector is presented by means field effect transistor (FETs) fabricated on epitaxial-grown graphene on silicon carbide. The contact resistance across the source and drain are made high to study the effect of THz response. It is demonstrated that the energy coupled to the antenna is the important parameter in designing the ultra-sensitive THz detectors rather than the contact resistances and channel conductivity. The realised graphene based detectors shows quite good responsivity (>535 V/W) and noise equivalent power (NEP) (<100pW/Hz0.5). The individual contributions of photo voltage due to plasma wave generation (PWG) and photo thermo-electric effect (PTE) in the effective THz detection is estimated. It is also seen that the temperature of the hot carriers generated in the FET channel due to PTE is varying with the gate bias and not constant as assumed in earlier works. A new method is proposed in this work for calculating the antenna coupling factor which varies with incident THz-radiation power. A comprehensive analytical model is worked out to understand the graphene based detector performance. |
| first_indexed | 2024-04-13T04:45:45Z |
| format | Article |
| id | doaj.art-31aad30aca2040d3b6153094aaf04662 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-13T04:45:45Z |
| publishDate | 2018-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-31aad30aca2040d3b6153094aaf046622022-12-22T03:01:51ZengAIP Publishing LLCAIP Advances2158-32262018-12-01812125122125122-710.1063/1.5063399070812ADVAntenna coupled graphene-FET as ultra-sensitive room temperature broadband THz detectorRama Murali G K0Prathmesh Deshmukh1S. S. Prabhu2Palash Kumar Basu3Indian Institute of Space Science and Technology, Thiruvananthapuram 695547, IndiaTata Institute of Fundamental Research, Mumbai 400005, IndiaTata Institute of Fundamental Research, Mumbai 400005, IndiaIndian Institute of Space Science and Technology, Thiruvananthapuram 695547, IndiaA high sensitivity, low power (∼1μW to 10 μW), room temperature, antenna coupled, THz (0.8 THz) detector is presented by means field effect transistor (FETs) fabricated on epitaxial-grown graphene on silicon carbide. The contact resistance across the source and drain are made high to study the effect of THz response. It is demonstrated that the energy coupled to the antenna is the important parameter in designing the ultra-sensitive THz detectors rather than the contact resistances and channel conductivity. The realised graphene based detectors shows quite good responsivity (>535 V/W) and noise equivalent power (NEP) (<100pW/Hz0.5). The individual contributions of photo voltage due to plasma wave generation (PWG) and photo thermo-electric effect (PTE) in the effective THz detection is estimated. It is also seen that the temperature of the hot carriers generated in the FET channel due to PTE is varying with the gate bias and not constant as assumed in earlier works. A new method is proposed in this work for calculating the antenna coupling factor which varies with incident THz-radiation power. A comprehensive analytical model is worked out to understand the graphene based detector performance.http://dx.doi.org/10.1063/1.5063399 |
| spellingShingle | Rama Murali G K Prathmesh Deshmukh S. S. Prabhu Palash Kumar Basu Antenna coupled graphene-FET as ultra-sensitive room temperature broadband THz detector AIP Advances |
| title | Antenna coupled graphene-FET as ultra-sensitive room temperature broadband THz detector |
| title_full | Antenna coupled graphene-FET as ultra-sensitive room temperature broadband THz detector |
| title_fullStr | Antenna coupled graphene-FET as ultra-sensitive room temperature broadband THz detector |
| title_full_unstemmed | Antenna coupled graphene-FET as ultra-sensitive room temperature broadband THz detector |
| title_short | Antenna coupled graphene-FET as ultra-sensitive room temperature broadband THz detector |
| title_sort | antenna coupled graphene fet as ultra sensitive room temperature broadband thz detector |
| url | http://dx.doi.org/10.1063/1.5063399 |
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