A 2-V 1.4-dB NF GaAs MMIC LNA for K-Band Applications

A 2-V 1.4-dB NF GaAs MMIC LNA for K-Band Applications

A 1.4-dB Noise Figure (NF) four-stage K-band Monolithic Microwave Integrated Circuit (MMIC) Low-Noise Amplifier (LNA) in UMS 100 nm GaAs pHEMT technology is presented. The proposed circuit is designed to cover the 5G New Release n258 frequency band (24.25–27.58 GHz). Momentum EM post-layout simulati...

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Bibliographic Details
Main Authors: David Galante-Sempere, Sunil Lalchand Khemchandani, Javier del Pino
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Sensors
Subjects:
low noise amplifier
noise figure
monolithic microwave integrated circuit
gallium arsenide
electromagnetic simulation
input return loss
Online Access:https://www.mdpi.com/1424-8220/23/2/867

Internet

https://www.mdpi.com/1424-8220/23/2/867

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