Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors
Abstract We performed a systematic study of the influence of environmental conditions on the electrical performance characteristics of solution-processed 2,7-dioctyl [1] benzothieno[3,2-b][1]-benzothiophene (C8-BTBT) thin-film transistors (TFTs). Four environmental exposure conditions were considere...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2019-05-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-019-3007-x |
| _version_ | 1797728188523085824 |
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| author | Jiaying Mai Naiwei Tang Waner He Zhengmiao Zou Chunlai Luo Aihua Zhang Zhen Fan Sujuan Wu Min Zeng Jinwei Gao Guofu Zhou Xubing Lu J-M Liu |
| author_facet | Jiaying Mai Naiwei Tang Waner He Zhengmiao Zou Chunlai Luo Aihua Zhang Zhen Fan Sujuan Wu Min Zeng Jinwei Gao Guofu Zhou Xubing Lu J-M Liu |
| author_sort | Jiaying Mai |
| collection | DOAJ |
| description | Abstract We performed a systematic study of the influence of environmental conditions on the electrical performance characteristics of solution-processed 2,7-dioctyl [1] benzothieno[3,2-b][1]-benzothiophene (C8-BTBT) thin-film transistors (TFTs). Four environmental exposure conditions were considered: high vacuum (HV), O2, N2, and air. The devices exposed to O2 and N2 for 2 h performed in a manner similar to that of the device kept in HV. However, the device exposed to air for 2 h exhibited significantly better electrical properties than its counterparts. The average and highest carrier mobility of the 70 air-exposed C8-BTBT TFTs were 4.82 and 8.07 cm2V-1s-1, respectively. This can be compared to 2.76 cm2V-1s-1 and 4.70 cm2V-1s-1, respectively, for the 70 devices kept in HV. Furthermore, device air stability was investigated. The electrical performance of C8-BTBT TFTs degrades after long periods of air exposure. Our work improves knowledge of charge transport behavior and mechanisms in C8-BTBT OTFTs. It also provides ideas that may help to improve device electrical performance further. |
| first_indexed | 2024-03-12T11:10:16Z |
| format | Article |
| id | doaj.art-3203435139b7419984a44f952f198e26 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T11:10:16Z |
| publishDate | 2019-05-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-3203435139b7419984a44f952f198e262023-09-02T03:01:43ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-05-011411810.1186/s11671-019-3007-xEffects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film TransistorsJiaying Mai0Naiwei Tang1Waner He2Zhengmiao Zou3Chunlai Luo4Aihua Zhang5Zhen Fan6Sujuan Wu7Min Zeng8Jinwei Gao9Guofu Zhou10Xubing Lu11J-M Liu12Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal UniversityInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal UniversityInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal UniversityInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal UniversityInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal UniversityInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal UniversityInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal UniversityGuangdong Provincial Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal UniversityGuangdong Provincial Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal UniversityGuangdong Provincial Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal UniversityGuangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal UniversityInstitute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal UniversityGuangdong Provincial Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal UniversityAbstract We performed a systematic study of the influence of environmental conditions on the electrical performance characteristics of solution-processed 2,7-dioctyl [1] benzothieno[3,2-b][1]-benzothiophene (C8-BTBT) thin-film transistors (TFTs). Four environmental exposure conditions were considered: high vacuum (HV), O2, N2, and air. The devices exposed to O2 and N2 for 2 h performed in a manner similar to that of the device kept in HV. However, the device exposed to air for 2 h exhibited significantly better electrical properties than its counterparts. The average and highest carrier mobility of the 70 air-exposed C8-BTBT TFTs were 4.82 and 8.07 cm2V-1s-1, respectively. This can be compared to 2.76 cm2V-1s-1 and 4.70 cm2V-1s-1, respectively, for the 70 devices kept in HV. Furthermore, device air stability was investigated. The electrical performance of C8-BTBT TFTs degrades after long periods of air exposure. Our work improves knowledge of charge transport behavior and mechanisms in C8-BTBT OTFTs. It also provides ideas that may help to improve device electrical performance further.http://link.springer.com/article/10.1186/s11671-019-3007-xSolution processC8-BTBTThin-film transistorsAir stabilityAmbient gases |
| spellingShingle | Jiaying Mai Naiwei Tang Waner He Zhengmiao Zou Chunlai Luo Aihua Zhang Zhen Fan Sujuan Wu Min Zeng Jinwei Gao Guofu Zhou Xubing Lu J-M Liu Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors Nanoscale Research Letters Solution process C8-BTBT Thin-film transistors Air stability Ambient gases |
| title | Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors |
| title_full | Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors |
| title_fullStr | Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors |
| title_full_unstemmed | Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors |
| title_short | Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors |
| title_sort | effects of ambient gases on the electrical performance of solution processed c8 btbt thin film transistors |
| topic | Solution process C8-BTBT Thin-film transistors Air stability Ambient gases |
| url | http://link.springer.com/article/10.1186/s11671-019-3007-x |
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