Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices
In this paper, we compare and discuss the main techniques for the analysis of the dynamic performance of GaN-based transistors. The pulsed current-voltage characterization provides information on the effect of different trapping voltages on various bias points of the device under test, leading to th...
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| Format: | Article |
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MDPI AG
2021-08-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/11/9/1037 |
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| author | Carlo De Santi Matteo Buffolo Gaudenzio Meneghesso Enrico Zanoni Matteo Meneghini |
| author_facet | Carlo De Santi Matteo Buffolo Gaudenzio Meneghesso Enrico Zanoni Matteo Meneghini |
| author_sort | Carlo De Santi |
| collection | DOAJ |
| description | In this paper, we compare and discuss the main techniques for the analysis of the dynamic performance of GaN-based transistors. The pulsed current-voltage characterization provides information on the effect of different trapping voltages on various bias points of the device under test, leading to the detection of all the possible effects, as well as to the choice of the optimal filling and measure bias conditions in other techniques. The drain current transients use one of the identified bias configurations to extract information on the deep level signature responsible for the performance variation and, thus, they can pinpoint the corresponding physical crystal lattice configuration, providing useful information to the growers on how the issue can be solved. Finally, given the complex interplay between the filling and emission time constants, the gate frequency sweeps can be used to obtain the real performance in the target operating condition. |
| first_indexed | 2024-03-10T07:47:12Z |
| format | Article |
| id | doaj.art-32317cd1d23b456fb1aa64a549bb904d |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T07:47:12Z |
| publishDate | 2021-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-32317cd1d23b456fb1aa64a549bb904d2023-11-22T12:34:54ZengMDPI AGCrystals2073-43522021-08-01119103710.3390/cryst11091037Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic DevicesCarlo De Santi0Matteo Buffolo1Gaudenzio Meneghesso2Enrico Zanoni3Matteo Meneghini4Department of Information Engineering, University of Padova, 35131 Padova, ItalyDepartment of Information Engineering, University of Padova, 35131 Padova, ItalyDepartment of Information Engineering, University of Padova, 35131 Padova, ItalyDepartment of Information Engineering, University of Padova, 35131 Padova, ItalyDepartment of Information Engineering, University of Padova, 35131 Padova, ItalyIn this paper, we compare and discuss the main techniques for the analysis of the dynamic performance of GaN-based transistors. The pulsed current-voltage characterization provides information on the effect of different trapping voltages on various bias points of the device under test, leading to the detection of all the possible effects, as well as to the choice of the optimal filling and measure bias conditions in other techniques. The drain current transients use one of the identified bias configurations to extract information on the deep level signature responsible for the performance variation and, thus, they can pinpoint the corresponding physical crystal lattice configuration, providing useful information to the growers on how the issue can be solved. Finally, given the complex interplay between the filling and emission time constants, the gate frequency sweeps can be used to obtain the real performance in the target operating condition.https://www.mdpi.com/2073-4352/11/9/1037dynamic performancedeep levelsgallium nitride |
| spellingShingle | Carlo De Santi Matteo Buffolo Gaudenzio Meneghesso Enrico Zanoni Matteo Meneghini Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices Crystals dynamic performance deep levels gallium nitride |
| title | Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices |
| title_full | Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices |
| title_fullStr | Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices |
| title_full_unstemmed | Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices |
| title_short | Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices |
| title_sort | dynamic performance characterization techniques in gallium nitride based electronic devices |
| topic | dynamic performance deep levels gallium nitride |
| url | https://www.mdpi.com/2073-4352/11/9/1037 |
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