Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices

Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices

In this paper, we compare and discuss the main techniques for the analysis of the dynamic performance of GaN-based transistors. The pulsed current-voltage characterization provides information on the effect of different trapping voltages on various bias points of the device under test, leading to th...

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Bibliographic Details
Main Authors: Carlo De Santi, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Format: Article
Language:English
Published: MDPI AG 2021-08-01
Series:Crystals
Subjects:
dynamic performance
deep levels
gallium nitride
Online Access:https://www.mdpi.com/2073-4352/11/9/1037

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