A Finite Element Analysis Model for Partial Discharges in Silicone Gel under a High Slew Rate, High-Frequency Square Wave Voltage in Low-Pressure Conditions
Wide bandgap (WBG) devices made from materials such as SiC, GaN, Ga<sub>2</sub>O<sub>3</sub> and diamond, which can tolerate higher voltages and currents compared to silicon-based devices, are the most promising approach for reducing the size and weight of power management an...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-05-01
|
| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/13/9/2152 |