A Finite Element Analysis Model for Partial Discharges in Silicone Gel under a High Slew Rate, High-Frequency Square Wave Voltage in Low-Pressure Conditions
Wide bandgap (WBG) devices made from materials such as SiC, GaN, Ga<sub>2</sub>O<sub>3</sub> and diamond, which can tolerate higher voltages and currents compared to silicon-based devices, are the most promising approach for reducing the size and weight of power management an...
Main Authors: | Moein Borghei, Mona Ghassemi |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-05-01
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Series: | Energies |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1073/13/9/2152 |
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