Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory
In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method. To determine how the Li-doping concentration affects the crystal lattice structure in the composite ZnO thin films, X-r...
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MDPI AG
2020-09-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/11/10/889 |
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| author | Xiaofeng Zhao Ping Song Huiling Gai Yi Li Chunpeng Ai Dianzhong Wen |
| author_facet | Xiaofeng Zhao Ping Song Huiling Gai Yi Li Chunpeng Ai Dianzhong Wen |
| author_sort | Xiaofeng Zhao |
| collection | DOAJ |
| description | In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method. To determine how the Li-doping concentration affects the crystal lattice structure in the composite ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. The resistive switching behaviors of the resulting Pt/Ag/LZO/Pt devices, with different Li-doping contents, were studied under direct current (DC) and pulse voltages. The experimental results showed that compared with the devices doped with Li-8% and -10%, the ZnO based RRAM device doped by 5% Li-doping presented stable bipolar resistive switching behaviors with DC voltage, including a low switching voltage (<1.0 V), a high endurance (>10<sup>3</sup> cycles), long retention time (>10<sup>4</sup> s), and a large resistive switching window. In addition, quick switching between a high-resistance state (HRS) and a low-resistance state (LRS) was achieved at a pulse voltage. To investigate the resistive switching mechanism of the device, a conduction model was installed based on Ag conducting filament transmission. The study of the resulting Pt/Ag/LZO/Pt devices makes it possible to further improve the performance of RRAM devices. |
| first_indexed | 2024-03-10T16:04:29Z |
| format | Article |
| id | doaj.art-323fe4a1e14c407ead491e1cf8b63546 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T16:04:29Z |
| publishDate | 2020-09-01 |
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| series | Micromachines |
| spelling | doaj.art-323fe4a1e14c407ead491e1cf8b635462023-11-20T15:01:28ZengMDPI AGMicromachines2072-666X2020-09-01111088910.3390/mi11100889Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access MemoryXiaofeng Zhao0Ping Song1Huiling Gai2Yi Li3Chunpeng Ai4Dianzhong Wen5Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, ChinaKey Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, ChinaKey Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, ChinaKey Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, ChinaKey Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, ChinaKey Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, ChinaIn this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method. To determine how the Li-doping concentration affects the crystal lattice structure in the composite ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. The resistive switching behaviors of the resulting Pt/Ag/LZO/Pt devices, with different Li-doping contents, were studied under direct current (DC) and pulse voltages. The experimental results showed that compared with the devices doped with Li-8% and -10%, the ZnO based RRAM device doped by 5% Li-doping presented stable bipolar resistive switching behaviors with DC voltage, including a low switching voltage (<1.0 V), a high endurance (>10<sup>3</sup> cycles), long retention time (>10<sup>4</sup> s), and a large resistive switching window. In addition, quick switching between a high-resistance state (HRS) and a low-resistance state (LRS) was achieved at a pulse voltage. To investigate the resistive switching mechanism of the device, a conduction model was installed based on Ag conducting filament transmission. The study of the resulting Pt/Ag/LZO/Pt devices makes it possible to further improve the performance of RRAM devices.https://www.mdpi.com/2072-666X/11/10/889resistive random access memoryLi-doping ZnO thin filmsresistive switching characteristicsmagnetron sputtering |
| spellingShingle | Xiaofeng Zhao Ping Song Huiling Gai Yi Li Chunpeng Ai Dianzhong Wen Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory Micromachines resistive random access memory Li-doping ZnO thin films resistive switching characteristics magnetron sputtering |
| title | Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory |
| title_full | Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory |
| title_fullStr | Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory |
| title_full_unstemmed | Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory |
| title_short | Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory |
| title_sort | li doping effect on characteristics of zno thin films resistive random access memory |
| topic | resistive random access memory Li-doping ZnO thin films resistive switching characteristics magnetron sputtering |
| url | https://www.mdpi.com/2072-666X/11/10/889 |
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