Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method. To determine how the Li-doping concentration affects the crystal lattice structure in the composite ZnO thin films, X-r...

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Bibliographic Details
Main Authors:	Xiaofeng Zhao, Ping Song, Huiling Gai, Yi Li, Chunpeng Ai, Dianzhong Wen
Format:	Article
Language:	English
Published:	MDPI AG 2020-09-01
Series:	Micromachines
Subjects:	resistive random access memory Li-doping ZnO thin films resistive switching characteristics magnetron sputtering
Online Access:	https://www.mdpi.com/2072-666X/11/10/889

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