DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As
Using calibrated simulations, we report the In0.35Ga0.65As based tunnel field-effect transistor (TFET) with thin δ-doped n+ pocket at the source-channel interface to improve the parameters such as on current (Ion), off-current (Ioff) and subthreshold swing (SS). The simulations results of proposed...
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Format: | Article |
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Instituto Federal de Educação, Ciência e Tecnologia do Rio Grande do Norte
2018-02-01
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Series: | Holos |
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Online Access: | http://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/6173 |
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author | Behnam Dorostkar Saeid Marjani |
author_facet | Behnam Dorostkar Saeid Marjani |
author_sort | Behnam Dorostkar |
collection | DOAJ |
description | Using calibrated simulations, we report the In0.35Ga0.65As based tunnel field-effect transistor (TFET) with thin δ-doped n+ pocket at the source-channel interface to improve the parameters such as on current (Ion), off-current (Ioff) and subthreshold swing (SS). The simulations results of proposed device is compared with analytical model that is shown with high precision of DC parameters by examining the effects of III-V semiconductor materials. Furthermore, the influence of pocket doping, pocket width, doping level, effective oxide thickness (EOT), temperature and mole fraction of III-V semiconductor material on device performance have been investigated. The results show that proposed device has a higher ON current (1×10-5 A/µm) and a steeper subthreshold swing (35 mV/decade) as compared with the conventional TFET. It shows a lot of promise for future scale CMOS technology for low voltage and high frequency application |
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format | Article |
id | doaj.art-3241a48444264ead94d6e40fafafcd74 |
institution | Directory Open Access Journal |
issn | 1807-1600 |
language | English |
last_indexed | 2024-12-22T19:22:12Z |
publishDate | 2018-02-01 |
publisher | Instituto Federal de Educação, Ciência e Tecnologia do Rio Grande do Norte |
record_format | Article |
series | Holos |
spelling | doaj.art-3241a48444264ead94d6e40fafafcd742022-12-21T18:15:21ZengInstituto Federal de Educação, Ciência e Tecnologia do Rio Grande do NorteHolos1807-16002018-02-011028829610.15628/holos.2018.61731869DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65AsBehnam Dorostkar0Saeid Marjani1Iran University of Science and Technology, Tehran, IranDepartment of Electrical Engineering, Ferdowsi University of Mashhad, Mashhad, IranUsing calibrated simulations, we report the In0.35Ga0.65As based tunnel field-effect transistor (TFET) with thin δ-doped n+ pocket at the source-channel interface to improve the parameters such as on current (Ion), off-current (Ioff) and subthreshold swing (SS). The simulations results of proposed device is compared with analytical model that is shown with high precision of DC parameters by examining the effects of III-V semiconductor materials. Furthermore, the influence of pocket doping, pocket width, doping level, effective oxide thickness (EOT), temperature and mole fraction of III-V semiconductor material on device performance have been investigated. The results show that proposed device has a higher ON current (1×10-5 A/µm) and a steeper subthreshold swing (35 mV/decade) as compared with the conventional TFET. It shows a lot of promise for future scale CMOS technology for low voltage and high frequency applicationhttp://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/6173analytical modelsemiconductor materialstunneling field-effect transistoron currentoff current |
spellingShingle | Behnam Dorostkar Saeid Marjani DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As Holos analytical model semiconductor materials tunneling field-effect transistor on current off current |
title | DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As |
title_full | DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As |
title_fullStr | DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As |
title_full_unstemmed | DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As |
title_short | DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As |
title_sort | dc analysis of p n p n tunneling field effect transistor based on in0 35ga0 65as |
topic | analytical model semiconductor materials tunneling field-effect transistor on current off current |
url | http://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/6173 |
work_keys_str_mv | AT behnamdorostkar dcanalysisofpnpntunnelingfieldeffecttransistorbasedonin035ga065as AT saeidmarjani dcanalysisofpnpntunnelingfieldeffecttransistorbasedonin035ga065as |