DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As

Using calibrated simulations, we report the In0.35Ga0.65As based tunnel field-effect transistor (TFET) with thin δ-doped n+ pocket at the source-channel interface to improve the parameters such as  on current (Ion), off-current (Ioff) and subthreshold swing (SS). The  simulations results of proposed...

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Main Authors: Behnam Dorostkar, Saeid Marjani
Format: Article
Language:English
Published: Instituto Federal de Educação, Ciência e Tecnologia do Rio Grande do Norte 2018-02-01
Series:Holos
Subjects:
Online Access:http://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/6173
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author Behnam Dorostkar
Saeid Marjani
author_facet Behnam Dorostkar
Saeid Marjani
author_sort Behnam Dorostkar
collection DOAJ
description Using calibrated simulations, we report the In0.35Ga0.65As based tunnel field-effect transistor (TFET) with thin δ-doped n+ pocket at the source-channel interface to improve the parameters such as  on current (Ion), off-current (Ioff) and subthreshold swing (SS). The  simulations results of proposed device is compared with analytical model that is shown  with high precision of DC parameters by examining the effects of III-V semiconductor materials. Furthermore, the influence of pocket doping, pocket width, doping level,  effective oxide thickness (EOT), temperature and mole fraction of III-V semiconductor material on device performance have  been investigated. The results show that proposed device  has a higher ON current  (1×10-5 A/µm) and a steeper subthreshold swing (35 mV/decade) as compared with the conventional TFET. It shows a lot of promise for future scale CMOS  technology for low voltage and high frequency application
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spelling doaj.art-3241a48444264ead94d6e40fafafcd742022-12-21T18:15:21ZengInstituto Federal de Educação, Ciência e Tecnologia do Rio Grande do NorteHolos1807-16002018-02-011028829610.15628/holos.2018.61731869DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65AsBehnam Dorostkar0Saeid Marjani1Iran University of Science and Technology, Tehran, IranDepartment of Electrical Engineering, Ferdowsi University of Mashhad, Mashhad, IranUsing calibrated simulations, we report the In0.35Ga0.65As based tunnel field-effect transistor (TFET) with thin δ-doped n+ pocket at the source-channel interface to improve the parameters such as  on current (Ion), off-current (Ioff) and subthreshold swing (SS). The  simulations results of proposed device is compared with analytical model that is shown  with high precision of DC parameters by examining the effects of III-V semiconductor materials. Furthermore, the influence of pocket doping, pocket width, doping level,  effective oxide thickness (EOT), temperature and mole fraction of III-V semiconductor material on device performance have  been investigated. The results show that proposed device  has a higher ON current  (1×10-5 A/µm) and a steeper subthreshold swing (35 mV/decade) as compared with the conventional TFET. It shows a lot of promise for future scale CMOS  technology for low voltage and high frequency applicationhttp://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/6173analytical modelsemiconductor materialstunneling field-effect transistoron currentoff current
spellingShingle Behnam Dorostkar
Saeid Marjani
DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As
Holos
analytical model
semiconductor materials
tunneling field-effect transistor
on current
off current
title DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As
title_full DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As
title_fullStr DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As
title_full_unstemmed DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As
title_short DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As
title_sort dc analysis of p n p n tunneling field effect transistor based on in0 35ga0 65as
topic analytical model
semiconductor materials
tunneling field-effect transistor
on current
off current
url http://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/6173
work_keys_str_mv AT behnamdorostkar dcanalysisofpnpntunnelingfieldeffecttransistorbasedonin035ga065as
AT saeidmarjani dcanalysisofpnpntunnelingfieldeffecttransistorbasedonin035ga065as