DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As

DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As

Using calibrated simulations, we report the In0.35Ga0.65As based tunnel field-effect transistor (TFET) with thin δ-doped n+ pocket at the source-channel interface to improve the parameters such as on current (Ion), off-current (Ioff) and subthreshold swing (SS). The simulations results of proposed...

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Bibliographic Details
Main Authors:	Behnam Dorostkar, Saeid Marjani
Format:	Article
Language:	English
Published:	Instituto Federal de Educação, Ciência e Tecnologia do Rio Grande do Norte 2018-02-01
Series:	Holos
Subjects:	analytical model semiconductor materials tunneling field-effect transistor on current off current
Online Access:	http://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/6173

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