Optical properties of InN/GaN quantum dot superlattice by changing dot size and interdot spacing

InN-based III nitride quantum dot (QD) technology has attracted much attention for extended potential applications in photonic devices covering a broad spectrum compared to conventional semiconductors. In this research we have investigated electronic transitions in InN/GaN QD super-lattice structure...

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Bibliographic Details
Main Authors: Deborah Eric, Jianliang Jiang, Ali Imran, Muhammad Noaman Zahid, Abbas Ahmad Khan
Format: Article
Language:English
Published: Elsevier 2019-06-01
Series:Results in Physics
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379719300208