Is the Bandgap of Bulk PdSe2 Located Truly in the Far‐Infrared Region? Determination by Fourier‐Transform Photocurrent Spectroscopy
2D bulk PdSe2, a group 10 noble metal dichalcogenide, is recognized as a newly found far‐infrared material with a bandgap energy (E G) of ≈0.05 eV and thus has attracted much attention as an optoelectronic material. However, the bandgap energy of bulk PdSe2 is the subject of a controversial debate a...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2022-11-01
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| Series: | Advanced Photonics Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/adpr.202200231 |
| _version_ | 1811332811132502016 |
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| author | Wataru Nishiyama Tomonori Nishimura Masao Nishioka Keiji Ueno Satoshi Iwamoto Kosuke Nagashio |
| author_facet | Wataru Nishiyama Tomonori Nishimura Masao Nishioka Keiji Ueno Satoshi Iwamoto Kosuke Nagashio |
| author_sort | Wataru Nishiyama |
| collection | DOAJ |
| description | 2D bulk PdSe2, a group 10 noble metal dichalcogenide, is recognized as a newly found far‐infrared material with a bandgap energy (E G) of ≈0.05 eV and thus has attracted much attention as an optoelectronic material. However, the bandgap energy of bulk PdSe2 is the subject of a controversial debate as a middle bandgap of ≈0.3 eV is also reported by electrical transport measurements. Although determining E G by optical absorption measurement is essential, the difficulty lies in the weak absorption caused by indirect transition. Herein, it is quantitatively estimated that the indirect E G of bulk PdSe2 is indeed 0.5 eV at 40 K based on the highly sensitive spectroscopic method of Fourier‐transformation photocurrent spectroscopy. Herein, it is suggested that the potential application of PdSe2 should be properly selected. |
| first_indexed | 2024-04-13T16:42:34Z |
| format | Article |
| id | doaj.art-32a528d5e5c4465ca126702e211b8045 |
| institution | Directory Open Access Journal |
| issn | 2699-9293 |
| language | English |
| last_indexed | 2024-04-13T16:42:34Z |
| publishDate | 2022-11-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Photonics Research |
| spelling | doaj.art-32a528d5e5c4465ca126702e211b80452022-12-22T02:39:10ZengWiley-VCHAdvanced Photonics Research2699-92932022-11-01311n/an/a10.1002/adpr.202200231Is the Bandgap of Bulk PdSe2 Located Truly in the Far‐Infrared Region? Determination by Fourier‐Transform Photocurrent SpectroscopyWataru Nishiyama0Tomonori Nishimura1Masao Nishioka2Keiji Ueno3Satoshi Iwamoto4Kosuke Nagashio5Department of Materials Engineering The University of Tokyo Tokyo 113-8656 JapanDepartment of Materials Engineering The University of Tokyo Tokyo 113-8656 JapanInstitute of Industrial Science The University of Tokyo Tokyo 153-8505 JapanDepartment of Chemistry Saitama University Saitama 338-8570 JapanInstitute of Industrial Science The University of Tokyo Tokyo 153-8505 JapanDepartment of Materials Engineering The University of Tokyo Tokyo 113-8656 Japan2D bulk PdSe2, a group 10 noble metal dichalcogenide, is recognized as a newly found far‐infrared material with a bandgap energy (E G) of ≈0.05 eV and thus has attracted much attention as an optoelectronic material. However, the bandgap energy of bulk PdSe2 is the subject of a controversial debate as a middle bandgap of ≈0.3 eV is also reported by electrical transport measurements. Although determining E G by optical absorption measurement is essential, the difficulty lies in the weak absorption caused by indirect transition. Herein, it is quantitatively estimated that the indirect E G of bulk PdSe2 is indeed 0.5 eV at 40 K based on the highly sensitive spectroscopic method of Fourier‐transformation photocurrent spectroscopy. Herein, it is suggested that the potential application of PdSe2 should be properly selected.https://doi.org/10.1002/adpr.202200231bandgap determinationsFourier-transform photocurrent spectroscopynoble metal dichalcogenidesphotothermoelectric effectsphotovoltaic effects |
| spellingShingle | Wataru Nishiyama Tomonori Nishimura Masao Nishioka Keiji Ueno Satoshi Iwamoto Kosuke Nagashio Is the Bandgap of Bulk PdSe2 Located Truly in the Far‐Infrared Region? Determination by Fourier‐Transform Photocurrent Spectroscopy Advanced Photonics Research bandgap determinations Fourier-transform photocurrent spectroscopy noble metal dichalcogenides photothermoelectric effects photovoltaic effects |
| title | Is the Bandgap of Bulk PdSe2 Located Truly in the Far‐Infrared Region? Determination by Fourier‐Transform Photocurrent Spectroscopy |
| title_full | Is the Bandgap of Bulk PdSe2 Located Truly in the Far‐Infrared Region? Determination by Fourier‐Transform Photocurrent Spectroscopy |
| title_fullStr | Is the Bandgap of Bulk PdSe2 Located Truly in the Far‐Infrared Region? Determination by Fourier‐Transform Photocurrent Spectroscopy |
| title_full_unstemmed | Is the Bandgap of Bulk PdSe2 Located Truly in the Far‐Infrared Region? Determination by Fourier‐Transform Photocurrent Spectroscopy |
| title_short | Is the Bandgap of Bulk PdSe2 Located Truly in the Far‐Infrared Region? Determination by Fourier‐Transform Photocurrent Spectroscopy |
| title_sort | is the bandgap of bulk pdse2 located truly in the far infrared region determination by fourier transform photocurrent spectroscopy |
| topic | bandgap determinations Fourier-transform photocurrent spectroscopy noble metal dichalcogenides photothermoelectric effects photovoltaic effects |
| url | https://doi.org/10.1002/adpr.202200231 |
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