Bias stability of solution-processed In2O3 thin film transistors

Bias stability of solution-processed In2O3 thin film transistors

We report the effect of bias stress on the drain current and threshold voltage of n-channel thin-film transistors based on solution processed In _2 O _3 layers. Application of a positive gate bias for variable time-periods led to displacements of the transfer curves in the positive gate bias directi...

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Bibliographic Details
Main Authors: Isam Abdullah, J Emyr Macdonald, Yen-Hung Lin, Thomas D Anthopoulos, Nasih Hma Salah, Shaida Anwar Kakil, Fahmi F Muhammadsharif
Format: Article
Language:English
Published: IOP Publishing 2020-01-01
Series:JPhys Materials
Subjects:
solution processed
indium oxide TFTs
bias stress
threshold voltage
Online Access:https://doi.org/10.1088/2515-7639/abc608

Internet

https://doi.org/10.1088/2515-7639/abc608

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